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1. WO2019045921 - RESPONDING TO POWER LOSS

Publication Number WO/2019/045921
Publication Date 07.03.2019
International Application No. PCT/US2018/043859
International Filing Date 26.07.2018
IPC
G11C 11/413 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
41forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
G11C 5/14 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
5Details of stores covered by group G11C11/63
14Power supply arrangements
CPC
G11C 14/0063
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
14Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
0054in which the volatile element is a SRAM cell
0063and the nonvolatile element is an EEPROM element, e.g. a floating gate or MNOS transistor
G11C 16/04
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
G11C 16/0483
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
04using variable threshold transistors, e.g. FAMOS
0483comprising cells having several storage transistors connected in series
G11C 16/08
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
08Address circuits; Decoders; Word-line control circuits
G11C 16/10
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
10Programming or data input circuits
G11C 16/225
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
22Safety or protection circuits preventing unauthorised or accidental access to memory cells
225Preventing erasure, programming or reading when power supply voltages are outside the required ranges
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • BONITZ, Rainer
Agents
  • LEFFERT, Thomas W.
  • PETERSON, Mark A.
Priority Data
15/691,82431.08.2017US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) RESPONDING TO POWER LOSS
(FR) RÉPONSE À UNE PERTE DE PUISSANCE
Abstract
(EN)
Methods of operating memory, and apparatus configured to perform similar methods, include obtaining information indicative of a data value stored in a particular memory cell of the memory, programming additional data to the particular memory cell, determining if a power loss to the memory is indicated while programming the additional data to the particular memory cell, and, if a power loss to the memory is indicated, selectively programming one memory cell of a pair of gate-connected non-volatile memory cells responsive to the information indicative of the data value stored in the particular memory cell. A resulting combination of threshold voltages of the one memory cell of the pair of gate-connected non-volatile memory cells and of the other memory cell of the pair of gate-connected non-volatile memory cells is representative of the information indicative of the data value stored in the particular memory cell.
(FR)
L'invention concerne des procédés de fonctionnement de mémoire, et un appareil configuré pour effectuer des procédés similaires, qui consistent à obtenir des informations indicatives d'une valeur de données stockée dans une cellule de mémoire particulière de la mémoire, à programmer des données supplémentaires dans la cellule de mémoire particulière, à déterminer si une perte de puissance vers la mémoire est indiquée tout en programmant les données supplémentaires vers la cellule de mémoire particulière, et, si une perte de puissance vers la mémoire est indiquée, à programmer sélectivement une cellule de mémoire d'une paire de cellules de mémoire non volatile connectées à une grille en réponse aux informations indicatives de la valeur de données stockée dans la cellule de mémoire particulière. Une combinaison résultante de tensions de seuil de la cellule de mémoire de la paire de cellules de mémoire non volatile connectées à une grille et de l'autre cellule de mémoire de la paire de cellules de mémoire non volatile connectées à une grille est représentative des informations indicatives de la valeur de données stockée dans la cellule de mémoire particulière.
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