Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019045762) QUANTUM INFORMATION PROCESSING DEVICE FORMATION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/045762 International Application No.: PCT/US2017/065017
Publication Date: 07.03.2019 International Filing Date: 07.12.2017
IPC:
H01L 39/24 (2006.01) ,G06N 99/00 (2010.01) ,H01P 11/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
24
Processes or apparatus specially adapted for the manufacture or treatment of devices provided for in group H01L39/135
G PHYSICS
06
COMPUTING; CALCULATING; COUNTING
N
COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS
99
Subject matter not provided for in other groups of this subclass
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
P
WAVEGUIDES; RESONATORS, LINES OR OTHER DEVICES OF THE WAVEGUIDE TYPE
11
Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
Applicants:
GOOGLE LLC [US/US]; 1600 Amphitheatre Parkway Mountain View, California 94043, US
Inventors:
MEGRANT, Anthony Edward; US
Agent:
VALENTINO, Joseph; US
FRANZ, Paul E.; US
Priority Data:
62/552,92731.08.2017US
Title (EN) QUANTUM INFORMATION PROCESSING DEVICE FORMATION
(FR) FORMATION DE DISPOSITIF DE TRAITEMENT D'INFORMATIONS QUANTIQUES
Abstract:
(EN) A method for forming at least part of a quantum information processing device is presented. The method includes providing a first electrically-conductive layer formed of a first electrically-conductive material (100') on a principal surface of a substrate (10), depositing a layer of dielectric material on the first electrically-conductive material, patterning the layer of dielectric material to form a pad of dielectric material and to reveal a first region of the first electrically-conductive layer, depositing a second electrically-conductive layer (104') on the pad of dielectric material and on the first region of the first electrically-conductive layer, patterning the second electrically-conductive layer and removing the pad of dielectric material using isotropic gas phase etching.
(FR) L'invention concerne un procédé de formation d'au moins une partie d'un dispositif de traitement d'informations quantiques. Le procédé consiste à : fournir une première couche électroconductrice formée d'un premier matériau électroconducteur (100') sur une surface principale d'un substrat (10), déposer une couche de matériau diélectrique sur le premier matériau électroconducteur, structurer la couche de matériau diélectrique pour former un tampon de matériau diélectrique et pour mettre en évidence une première région de la première couche électroconductrice, déposer une seconde couche électroconductrice (104') sur le tampon de matériau diélectrique et sur la première région de la première couche électroconductrice, structurer la seconde couche électroconductrice et retirer le tampon de matériau diélectrique à l'aide d'une gravure en phase gazeuse isotrope.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)