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1. WO2019045505 - SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME

Publication Number WO/2019/045505
Publication Date 07.03.2019
International Application No. PCT/KR2018/010112
International Filing Date 31.08.2018
IPC
H01L 25/075 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04the devices not having separate containers
075the devices being of a type provided for in group H01L33/78
H01L 33/62 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
62Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H01L 33/50 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
50Wavelength conversion elements
H01L 33/36 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
H01L 33/58 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48characterised by the semiconductor body packages
58Optical field-shaping elements
CPC
F21S 41/153
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
10characterised by the light source
14characterised by the type of light source
141Light emitting diodes [LED]
151arranged in one or more lines
153arranged in a matrix
F21S 41/192
FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
21LIGHTING
SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
41Illuminating devices specially adapted for vehicle exteriors, e.g. headlamps
10characterised by the light source
19Attachment of light sources or lamp holders
192Details of lamp holders, terminals or connectors
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 2933/0016
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0016relating to electrodes
H01L 2933/0025
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0025relating to coatings
H01L 2933/0041
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2933Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
0008Processes
0041relating to wavelength conversion elements
Applicants
  • 엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR]/[KR]
Inventors
  • 이상열 LEE, Sang Youl
  • 강기만 KANG, Ki Man
  • 김도엽 KIM, Do Yub
  • 이은득 LEE, Eun Dk
Agents
  • 특허법인 다나 DANA PATENT LAW FIRM
Priority Data
10-2017-011122931.08.2017KR
Publication Language Korean (KO)
Filing Language Korean (KO)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PHARE COMPRENANT CELUI-CI
(KO) 반도체 소자 및 이를 포함하는 헤드 램프
Abstract
(EN)
Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.
(FR)
Dans un mode de réalisation, la présente invention concerne un dispositif à semi-conducteur et un phare comprenant celui-ci, le dispositif à semi-conducteur comprenant : un substrat; une pluralité de structures à semi-conducteur agencées au niveau d'une partie centrale du substrat; des premier et deuxième plots de connexion agencés au niveau d'une partie de bord du substrat; une première ligne de câblage connectant électriquement au moins l'une de la pluralité de structures à semi-conducteur au premier plot de connexion; une deuxième ligne de câblage connectant électriquement au moins l'une de la pluralité de structures à semi-conducteur au deuxième plot de connexion; et une couche de conversion de longueur d'onde agencée sur la pluralité de structures à semi-conducteur, la pluralité de structures à semi-conducteur étant agencées de façon à être espacées les unes des autres dans une première direction et une deuxième direction, la première direction et la deuxième direction se croisant, la distance d'intervalle entre la pluralité de structures à semi-conducteur étant de 5 µm à 40 µm et l'épaisseur de la couche de conversion de longueur d'onde étant de 1 µm à 50 µm.
(KO)
실시 예는, 기판; 상기 기판의 중심부에 배치되는 복수의 반도체 구조물; 상기 기판의 테두리부에 배치되는 제1 패드 및 제2 패드; 상기 복수의 반도체 구조물 중 적어도 하나 및 상기 제1 패드를 전기적으로 연결하는 제 1 배선라인; 상기 복수의 반도체 구조물 중 적어도 하나 및 상기 제2패드를 전기적으로 연결하는 제 2 배선라인; 및 상기 복수의 반도체 구조물 상에 배치되는 파장변환층을 포함하고, 상기 복수의 반도체 구조물은 제1 방향 및 제2 방향으로 이격 배치되고, 상기 제1 방향과 제2 방향은 서로 교차하고, 상기 복수 개의 반도체 구조물 사이의 이격 거리는 5㎛ 내지 40㎛이고, 상기 파장변환층의 두께는 1㎛ 이상 50㎛이하인 반도체 소자 및 이를 포함하는 헤드 램프를 개시한다.
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