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1. (WO2019045505) SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME
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Pub. No.: WO/2019/045505 International Application No.: PCT/KR2018/010112
Publication Date: 07.03.2019 International Filing Date: 31.08.2018
IPC:
H01L 25/075 (2006.01) ,H01L 33/62 (2010.01) ,H01L 33/50 (2010.01) ,H01L 33/36 (2010.01) ,H01L 33/58 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
075
the devices being of a type provided for in group H01L33/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
Applicants:
엘지이노텍 주식회사 LG INNOTEK CO., LTD. [KR/KR]; 서울시 중구 후암로 98 98, Huam-ro Jung-gu Seoul 04637, KR
Inventors:
이상열 LEE, Sang Youl; KR
강기만 KANG, Ki Man; KR
김도엽 KIM, Do Yub; KR
이은득 LEE, Eun Dk; KR
Agent:
특허법인 다나 DANA PATENT LAW FIRM; 서울시 강남구 역삼로3길 11 광성빌딩 신관4~6층 4~6th Floor, New Wing, Gwangsung Bldg. 11, Yeoksam-ro 3-gil Gangnam-gu Seoul 06242, KR
Priority Data:
10-2017-011122931.08.2017KR
Title (EN) SEMICONDUCTOR DEVICE AND HEAD LAMP COMPRISING SAME
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET PHARE COMPRENANT CELUI-CI
(KO) 반도체 소자 및 이를 포함하는 헤드 램프
Abstract:
(EN) Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.
(FR) Dans un mode de réalisation, la présente invention concerne un dispositif à semi-conducteur et un phare comprenant celui-ci, le dispositif à semi-conducteur comprenant : un substrat ; une pluralité de structures à semi-conducteur agencées au niveau d’une partie centrale du substrat ; des premier et deuxième plots de connexion agencés au niveau d’une partie de bord du substrat ; une première ligne de câblage connectant électriquement au moins l’une de la pluralité de structures à semi-conducteur au premier plot de connexion ; une deuxième ligne de câblage connectant électriquement au moins l’une de la pluralité de structures à semi-conducteur au deuxième plot de connexion ; et une couche de conversion de longueur d’onde agencée sur la pluralité de structures à semi-conducteur, la pluralité de structures à semi-conducteur étant agencées de façon à être espacées les unes des autres dans une première direction et une deuxième direction, la première direction et la deuxième direction se croisant, la distance d’intervalle entre la pluralité de structures à semi-conducteur étant de 5 µm à 40 µm et l’épaisseur de la couche de conversion de longueur d’onde étant de 1 µm à 50 µm.
(KO) 실시 예는, 기판; 상기 기판의 중심부에 배치되는 복수의 반도체 구조물; 상기 기판의 테두리부에 배치되는 제1 패드 및 제2 패드; 상기 복수의 반도체 구조물 중 적어도 하나 및 상기 제1 패드를 전기적으로 연결하는 제 1 배선라인; 상기 복수의 반도체 구조물 중 적어도 하나 및 상기 제2패드를 전기적으로 연결하는 제 2 배선라인; 및 상기 복수의 반도체 구조물 상에 배치되는 파장변환층을 포함하고, 상기 복수의 반도체 구조물은 제1 방향 및 제2 방향으로 이격 배치되고, 상기 제1 방향과 제2 방향은 서로 교차하고, 상기 복수 개의 반도체 구조물 사이의 이격 거리는 5㎛ 내지 40㎛이고, 상기 파장변환층의 두께는 1㎛ 이상 50㎛이하인 반도체 소자 및 이를 포함하는 헤드 램프를 개시한다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)