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1. (WO2019045313) COPPER HALIDE COLOR OPTICAL SENSOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/045313 International Application No.: PCT/KR2018/009193
Publication Date: 07.03.2019 International Filing Date: 10.08.2018
IPC:
H01L 31/101 (2006.01) ,H01L 31/0224 (2006.01) ,H01L 31/14 (2006.01) ,G01J 3/46 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101
Devices sensitive to infra-red, visible or ultra-violet radiation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
12
structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
14
the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers, image storage devices
G PHYSICS
01
MEASURING; TESTING
J
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED, VISIBLE OR ULTRA-VIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
3
Spectrometry; Spectrophotometry; Monochromators; Measuring colours
46
Measurement of colour; Colour measuring devices, e.g. colorimeters
Applicants:
주식회사 페타룩스 PETALUX INC. [KR/KR]; 경기도 성남시 중원구 양현로 405번길 12, 3층 F3, 12, Yanghyeon-ro 405beon-gil, Jungwon-gu Seongnam-si Gyeonggi-do 13438, KR
Inventors:
안도열 AHN, Do Yeol; KR
Agent:
특허법인청맥 C.M. PATENT & LAW FIRM, LLP.; 서울시 강남구 테헤란로25길 39, 2층 2F, 39, Teheran-ro 25-gil Gangnam-gu Seoul 06131, KR
Priority Data:
10-2017-010935129.08.2017KR
Title (EN) COPPER HALIDE COLOR OPTICAL SENSOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
(FR) STRUCTURE DE CAPTEUR OPTIQUE COULEUR À HALOGÉNURE DE CUIVRE ET SON PROCÉDÉ DE FABRICATION
(KO) 할로겐화구리 컬러 광센서 구조 및 제조방법
Abstract:
(EN) The present invention relates to an optical sensor structure having improved optical characteristics by comprising a copper halide region, and a manufacturing method therefor, the present invention comprising: a silicon semiconductor substrate; and junctions that are between at least three regions having opposite polarity to each other and are formed on the silicon semiconductor substrate, wherein the junctions are substantially arranged in vertical alignment with each other, and at least one of the junctions includes a junction between a first-polar-type copper halide region and a second-polar-type silicon region. Accordingly, quantum efficiency is improved due to the optical characteristics of copper halide, thereby allowing the size of the optical sensor being manufactured to be decreased.
(FR) La présente invention concerne une structure de capteur optique ayant des caractéristiques optiques améliorées en comprenant une région d'halogénure de cuivre, et son procédé de fabrication. La présente invention comprend : un substrat semiconducteur en silicium ; et des jonctions qui se trouvent entre au moins trois régions ayant des polarités opposées l'une par rapport à l'autre et qui sont formées sur le substrat semiconducteur en silicium. Les jonctions sont agencées sensiblement en un alignement vertical les unes avec les autres et au moins l'une des jonctions comprend une jonction entre une région d'halogénure de cuivre de premier type polaire et une région de silicium de deuxième type polaire. Par conséquent, l'efficacité quantique est améliorée en raison des caractéristiques optiques de l'halogénure de cuivre, ce qui permet de réduire la taille du capteur optique fabriqué.
(KO) 본 발명은 할로겐화구리 영역을 포함하여 광학특성이 개선된 광센서의 구조 및 그의 제조방법으로, 실리콘 반도체 기판 및 상기 실리콘 반도체 기판 상에 형성되는, 적어도 3개의 서로 반대의 극성을 갖는 영역의 접합들을 포함하여, 접합들은 실질적으로 서로간에 수직으로 정렬되어 배치되고, 상기 접합들 중 적어도 하나는 제1 극형의 할로겐화구리 영역과 제2 극형의 실리콘 영역의 접합을 포함한다. 이에 따라, 할로겐화구리의 광학적특성으로 양자 효율이 향상되어, 제조되는 광센서의 크기를 축소시키는 효과를 가질 수 있다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)