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1. (WO2019045277) LIGHT EMITTING DEVICE FOR PIXEL AND LED DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/045277 International Application No.: PCT/KR2018/008332
Publication Date: 07.03.2019 International Filing Date: 24.07.2018
IPC:
H01L 25/075 (2006.01) ,H01L 33/38 (2010.01) ,H01L 27/15 (2006.01) ,H01L 33/62 (2010.01) ,H01L 33/36 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
075
the devices being of a type provided for in group H01L33/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
38
with a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15
including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
Applicants:
주식회사 루멘스 LUMENS CO.,LTD. [KR/KR]; 경기도 용인시 기흥구 원고매로 12 12, Wongomae-ro, Giheung-gu Yongin-si Gyeonggi-do 17086, KR
Inventors:
오승현 OH, Seunghyun; KR
유태경 YOO, Taekyung; KR
조성식 JO, Sungsik; KR
김민표 KIM, Minpyo; KR
신지유 SHIN, Jiyu; KR
김대원 KIM, Daewon; KR
Agent:
유창열 RYU, Changyeol; KR
Priority Data:
10-2017-010841028.08.2017KR
10-2018-000599717.01.2018KR
10-2018-001408905.02.2018KR
10-2018-003457026.03.2018KR
10-2018-005669117.05.2018KR
Title (EN) LIGHT EMITTING DEVICE FOR PIXEL AND LED DISPLAY DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT POUR DISPOSITIF D'AFFICHAGE DE PIXELS À DEL
(KO) 픽셀용 발광소자 및 엘이디 디스플레이 장치
Abstract:
(EN) A light emitting device is disclosed. The light emitting device comprises a mount substrate on which a first electrode pad, a second electrode pad, a third electrode pad, and a fourth electrode pad are formed; a first vertical LED chip which is mounted on the mount substrate such that a lower portion thereof is connected to the first electrode pad; a second vertical LED chip which is mounted on the mount substrate such that a lower portion thereof is connected to the second electrode pad; a third vertical LED chip which is mounted on the mount substrate such that a lower portion thereof is connected to the third electrode pad; a conductive light transmitting plate which is electrically connected to the upper portion of the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip; and a conductor which connects the conductive light transmitting plate and the fourth electrode pad, wherein individual driving power is applied to the first vertical LED chip, the second vertical LED chip, and the third vertical LED chip, respectively, through the first electrode pad, the second electrode pad, and the third electrode pad, respectively, or through the fourth electrode pad.
(FR) La présente invention concerne un dispositif électroluminescent. Le dispositif électroluminescent comprend un substrat de montage sur lequel sont formés un premier plot d'électrode, un deuxième plot d'électrode, un troisième plot d'électrode et un quatrième plot d'électrode; une première puce de DEL verticale qui est montée sur le substrat de montage de telle sorte que sa partie inférieure est connectée au premier plot d'électrode; une deuxième puce de DEL verticale qui est montée sur le substrat de montage de telle sorte que sa partie inférieure est connectée au deuxième plot d'électrode; une troisième puce de DEL verticale qui est montée sur le substrat de montage de telle sorte que sa partie inférieure est connectée au troisième plot d'électrode; une plaque de transmission de lumière conductrice qui est connectée électriquement à la partie supérieure de la première puce de DEL verticale, de la deuxième puce de DEL verticale et de la troisième puce de DEL verticale; et un conducteur qui connecte la plaque de transmission de lumière conductrice et le quatrième plot d'électrode, une puissance d'excitation individuelle étant appliquée à la première puce de DEL verticale, à la deuxième puce de DEL verticale et à la troisième puce de DEL verticale, respectivement, à travers le premier plot d'électrode, le deuxième plot d'électrode et le troisième plot d'électrode, respectivement, ou à travers le quatrième plot d'électrode.
(KO) 발광소자가 개시된다. 상기 발광소자는 제1 전극패드, 제2 전극패드, 제3 전극패드 및 제4 전극패드가 형성된 마운트 기판; 하부가 상기 제1 전극패드와 연결되도록 상기 마운트 기판에 실장되는 제1 버티컬 엘이디 칩; 하부가 상기 제2 전극패드와 연결되도록 상기 마운트 기판에 실장되는 제2 버티컬 엘이디 칩; 하부가 상기 제3 전극패드와 연결되도록 상기 마운트 기판에 실장되는 제3 버티컬 엘이디 칩; 상기 제1 버티컬 엘이디 칩, 상기 제2 버티컬 엘이디 칩 및 상기 제3 버티컬 엘이디 칩의 상부와 전기적으로 연결되는 도전성 광 투과판; 및 상기 도전성 광 투과판과 상기 제4 전극패드를 연결하는 전도체를 포함하며, 상기 제 1 전극패드, 상기 제 2 전극패드 및 상기 제 3 전극패드 각각을 통해 또는 상기 제4 전극패드를 통해, 상기 제1 버티컬 엘이디 칩, 상기 제2 버티컬 엘이디 칩 및 상기 제3 버티컬 엘이디 칩 각각으로 개별 구동 전원이 인가된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)