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1. (WO2019045276) SPUTTERING CATHODE AND SPUTTERING DEVICE FOR FORMING HIGH-DENSITY PLASMA
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Pub. No.: WO/2019/045276 International Application No.: PCT/KR2018/008292
Publication Date: 07.03.2019 International Filing Date: 23.07.2018
IPC:
H01J 37/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
34
operating with cathodic sputtering
Applicants:
(주) 씨앤아이테크놀로지 CNI TECHNOLOGY, INC. [KR/KR]; 경기도 화성시 삼성1로1길 32 32, Samsung 1-ro 1-gil, Hwaseong-si, Gyeonggi-do 18449, KR
Inventors:
허진 HEO, Jin; KR
한규민 HAN, Kyu Min; KR
이진선 LEE, Jin Seon; KR
이민진 LEE, Min Jin; KR
이호철 LEE, Ho Cheol; KR
Agent:
안준형 AHN, Joon-Hyung; KR
남승희 NAM, Seung-Hee; KR
이강민 LEE, Kangmin; KR
Priority Data:
10-2017-010909629.08.2017KR
Title (EN) SPUTTERING CATHODE AND SPUTTERING DEVICE FOR FORMING HIGH-DENSITY PLASMA
(FR) CATHODE DE PULVÉRISATION ET DISPOSITIF DE PULVÉRISATION PERMETTANT DE FORMER UN PLASMA HAUTE DENSITÉ
(KO) 고밀도 플라즈마 형성을 위한 스퍼터링 캐소드 및 스퍼터링 장치
Abstract:
(EN) The present invention provides a sputtering cathode and a sputtering device for forming high-density plasma for increasing the strength of a magnetic field formed on one surface of a sputtering target. One embodiment of the present invention provides the sputtering cathode and the sputtering device, the sputtering cathode having a plurality of magnets comprising: a first magnet of which a magnetic pole having a first polarity faces a sputtering target; and a plurality of second magnets of which magnetic poles having the same polarity as the first polarity face a support member, and which are continuously arranged at both sides of the first magnet.
(FR) La présente invention concerne une cathode de pulvérisation et un dispositif de pulvérisation permettant de former un plasma haute densité afin d'augmenter la résistance d'un champ magnétique formé sur une surface d'une cible de pulvérisation. Un mode de réalisation de la présente invention porte sur la cathode de pulvérisation et sur le dispositif de pulvérisation, la cathode de pulvérisation étant pourvue d'une pluralité d'aimants comprenant : un premier aimant dont un pôle magnétique ayant une première polarité est orienté vers une cible de pulvérisation; et une pluralité de seconds aimants dont les pôles magnétiques ayant la même polarité que la première polarité sont orientés vers un élément de support, et qui sont disposés en continu de part et d'autre du premier aimant.
(KO) 본 발명은 스퍼터링 타겟의 일면에 형성되는 자기장의 세기를 증가시키는 고밀도 플라즈마 형성을 위한 스퍼터링 캐소드 및 스퍼터링 장치를 제시한다. 본 발명의 일실시예에서는 제1 극성을 갖는 자극이 스퍼터링 타겟을 향하는 제1 자석; 및 상기 제1 극성과 동일한 극성을 갖는 자극이 지지부재를 향하며, 상기 제1 자석의 양측으로 복수개가 연이어 배치되는 제2 자석을 포함하는 복수의 자석으로 구비하는 스퍼터링 캐소드 및 스퍼터링 장치가 제시된다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)