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1. (WO2019045153) A PERC SOLAR CELL HAVING ENHANCED INTERFACE PROPERTIES, MANUFACTURING METHOD OF THE PERC SOLAR CELL, AND MANUFACTURING DEVICE OF THE PERC SOLAR CELL
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Pub. No.: WO/2019/045153 International Application No.: PCT/KR2017/009637
Publication Date: 07.03.2019 International Filing Date: 04.09.2017
IPC:
H01L 31/05 (2006.01) ,H01L 31/18 (2006.01) ,H01L 31/068 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
05
characterised by special interconnection means
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
068
the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
Applicants:
HANWHA CORPORATION [KR/KR]; 86, Cheonggyecheon-ro Jung-gu Seoul 04541, KR
HANWHA Q CELLS GMBH [DE/DE]; Sonnenallee 17-21 06766 Bitterfeld-Wolfen/ OT Thalheim, DE
Inventors:
HYUN HO, Lee; KR
BYUNG YUN, Choi; KR
JONG KUK, Han; KR
JONG SUNG, Choi; KR
MIN HO, Kim; KR
MATTHIAS, Junghanel; DE
ENRICO, Jarzembowski; DE
STEFAN, Peters; DE
Agent:
TW INTERNATIONAL PATENT AND LAWFIRM; 13F 114, Yeoksam-ro Gangnam-gu Seoul 06252, KR
Priority Data:
10-2017-011205701.09.2017KR
Title (EN) A PERC SOLAR CELL HAVING ENHANCED INTERFACE PROPERTIES, MANUFACTURING METHOD OF THE PERC SOLAR CELL, AND MANUFACTURING DEVICE OF THE PERC SOLAR CELL
(FR) CELLULE SOLAIRE PERC AYANT DES PROPRIÉTÉS D'INTERFACE AMÉLIORÉES, PROCÉDÉ DE FABRICATION DE LA CELLULE SOLAIRE PERC ET DISPOSITIF DE FABRICATION DE LA CELLULE SOLAIRE PERC
Abstract:
(EN) Disclosed is a method and apparatus for manufacturing a PERC (Passivated Emitter Rear Cell) solar cell, the method including a passivation layer formation step of placing a substrate for a PERC solar cell in a chamber and forming a passivation layer on the rear surface of the substrate in the chamber and a capping layer formation step of forming a capping layer for covering the passivation layer, wherein a in-situ PDA (Post-Deposition Activating) step for activating the passivation layer which is formed through deposition is performed in the chamber before the capping layer formation step.
(FR) L'invention concerne un procédé et un appareil de fabrication d'une cellule solaire PERC (Cellule Solaire Arrière à Émetteur Passivé) , le procédé comprenant une étape de formation de couche de passivation consistant à placer un substrat pour une cellule solaire PERC dans une chambre et à former une couche de passivation sur la surface arrière du substrat dans la chambre et une étape de formation de couche de recouvrement consistant à former une couche de recouvrement pour recouvrir la couche de passivation, une étape in situ PDA (activation après dépôt) pour activer la couche de passivation qui est formée par dépôt étant effectuée dans la chambre avant l'étape de formation de couche de recouvrement.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)