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1. (WO2019045126) THIN FILM GETTER AND MANUFACTURING METHOD THEREFOR
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Pub. No.: WO/2019/045126 International Application No.: PCT/KR2017/009389
Publication Date: 07.03.2019 International Filing Date: 28.08.2017
IPC:
H01L 21/322 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/324 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322
to modify their internal properties, e.g. to produce internal imperfections
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
324
Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Applicants:
한양대학교에리카산학협력단 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS [KR/KR]; 경기도 안산시 상록구 한양대학로 55 55, Hanyangdaehak-ro Sangrok-gu Ansan-si Gyeonggi-do 15588, KR
Inventors:
좌용호 CHOA, Yongho; KR
임효령 LIM, Hyoryoung; KR
엄누시아 EOM, Nusia; KR
Agent:
박상열 PARK, Sangyoul; KR
Priority Data:
Title (EN) THIN FILM GETTER AND MANUFACTURING METHOD THEREFOR
(FR) GETTER EN COUCHE MINCE ET SON PROCÉDÉ DE FABRICATION
(KO) 박막 게터, 및 그 제조 방법
Abstract:
(EN) A thin film getter is provided. The thin film getter comprises a substrate and an absorption layer on the substrate, wherein the absorption layer comprises a getter material for absorbing target gas and an auxiliary material for providing a moving path of the target gas, and the getter material can be divided into a plurality of getter regions by the auxiliary material.
(FR) La présente invention porte sur un getter en couche mince. Le getter en couche mince comprend un substrat et une couche d'absorption sur le substrat, la couche d'absorption comprenant un matériau getter pour absorber un gaz cible et un matériau auxiliaire pour fournir un trajet de déplacement du gaz cible, et le matériau getter peut être divisé en une pluralité de régions getter par le matériau auxiliaire.
(KO) 박막 게터가 제공된다. 기판, 및 상기 기판 상의 흡수층을 포함하되, 상기 흡수층은, 타겟 가스를 흡수하는 게터재, 및 상기 타겟 가스의 이동 경로를 제공하는 보조재를 포함하되, 상기 게터재는, 상기 보조재에 의해 복수의 게터 영역으로 구분될 수 있다.
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)