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1. (WO2019045107) METHOD FOR FORMING REVERSAL PATTERN AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/045107 International Application No.: PCT/JP2018/032668
Publication Date: 07.03.2019 International Filing Date: 03.09.2018
IPC:
G03F 7/40 (2006.01) ,G03F 7/004 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
40
Treatment after imagewise removal, e.g. baking
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
崎田 享平 SAKITA Kyohei; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-16926104.09.2017JP
Title (EN) METHOD FOR FORMING REVERSAL PATTERN AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
(FR) PROCÉDÉ DE FORMATION D'UN MOTIF D'INVERSION ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE
(JA) 反転パターン形成方法、電子デバイスの製造方法
Abstract:
(EN) Provided are a method for forming a reversal pattern and a method for manufacturing an electronic device which excel in the embeddability of a composition for reversal pattern formation between resist patterns and also excel in the removal selectivity of the resist patterns. The method for forming a reversal pattern includes the steps of: forming a resist film on a substrate using a photosensitive composition in which the value A obtained by formula (1) is 0.14 or greater; exposing the resist film to light; developing the resist film exposed to light and forming a resist pattern; applying a coating of a composition for pattern reversal film formation so as to cover the resist pattern and forming a pattern reversal film; etching back the pattern reversal film and causing the surface of the resist pattern to be exposed; and removing the resist pattern and forming a reversal pattern. Formula (1): A = ([H] x 0.04 + [C] x 1.0 + [N] x 2.1 + [O] x 3.6 + [F] x 5.6 + [S] x 0.04 + [I] x 39.5)/([H] x 1+ [C] x 12 + [N] x 14 + [O] x 16 + [F] x 19 + [S] x 32 + [I] x 127
(FR) L'invention concerne un procédé de formation d'un motif d'inversion et un procédé de fabrication d'un dispositif électronique qui se distinguent par leur capacité à intégrer une composition destinée à la formation d'un motif d'inversion entre des motifs de réserve et par leur excellente sélectivité dans l'élimination des motifs de réserve. Le procédé de formation d'un motif d'inversion comprend les étapes consistant à : former un film de réserve sur un substrat en utilisant une composition photosensible dans laquelle la valeur A obtenue par la formule (1) est égale ou supérieure à 0,14; exposer le film de réserve à la lumière; développer le film de réserve exposé à la lumière et former un motif de réserve; appliquer un revêtement fait d'une composition destinée à la formation d'un film d'inversion de motif de façon à recouvrir le motif de réserve et à former un film d'inversion de motif; graver le film d'inversion de motif et faire en sorte que la surface du motif de réserve soit exposée; et retirer le motif de réserve et former un motif d'inversion. Formule (1) : A = ([H] x 0,04 + [C] x 1,0 + [N] x 2,1 + [O] x 3,6 + [F] x 5,6 + [S] x 0,04 + [I] x 39,5)/([H] x1+ [C] x 12 + [N] x 14 + [O] x 16 + [F] x 19 + [S] x 32 + [I] x 127)
(JA) パターン反転膜形成用組成物のレジストパターン間への埋め込み性が優れ、かつ、レジストパターンの除去選択性にも優れる反転パターン形成方法、電子デバイスの製造方法を提供する。反転パターン形成方法は、式(1)で求められるA値が0.14以上である感光性組成物を用いて、基板上にレジスト膜を形成する工程と、レジスト膜を露光する工程と、露光されたレジスト膜を現像し、レジストパターンを形成する工程と、レジストパターンを被覆するように、パターン反転膜形成用組成物を塗布して、パターン反転膜を形成する工程と、パターン反転膜をエッチバックして、レジストパターンの表面を露出させる工程とレジストパターンを除去して反転パターンを形成する工程と、を有する。 式(1):A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×0.04+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)