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1. (WO2019045088) HIGH FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
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Pub. No.: WO/2019/045088 International Application No.: PCT/JP2018/032529
Publication Date: 07.03.2019 International Filing Date: 03.09.2018
IPC:
H01L 23/00 (2006.01) ,H01L 21/56 (2006.01) ,H01L 23/02 (2006.01) ,H01L 25/04 (2014.01) ,H01L 25/065 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H05K 1/02 (2006.01) ,H05K 3/00 (2006.01) ,H05K 3/28 (2006.01) ,H05K 9/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
56
Encapsulations, e.g. encapsulating layers, coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
02
Containers; Seals
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
065
the devices being of a type provided for in group H01L27/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
02
Details
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3
Apparatus or processes for manufacturing printed circuits
22
Secondary treatment of printed circuits
28
Applying non-metallic protective coatings
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
9
Screening of apparatus or components against electric or magnetic fields
Applicants:
株式会社村田製作所 MURATA MANUFACTURING CO., LTD. [JP/JP]; 京都府長岡京市東神足1丁目10番1号 10-1, Higashikotari 1-chome, Nagaokakyo-shi, Kyoto 6178555, JP
Inventors:
大坪 喜人 OTSUBO, Yoshihito; JP
山口 理 YAMAGUCHI, Osamu; JP
Agent:
梁瀬 右司 YANASE, Yuji; JP
木村 公一 KIMURA, Koichi; JP
丸山 陽介 MARUYAMA, Yosuke; JP
Priority Data:
2017-16927404.09.2017JP
Title (EN) HIGH FREQUENCY MODULE AND METHOD FOR PRODUCING SAME
(FR) MODULE HAUTE FRÉQUENCE ET SON PROCÉDÉ DE PRODUCTION
(JA) 高周波モジュールおよびその製造方法
Abstract:
(EN) Provided is a high frequency module which has stable shielding performance, and wherein a shield layer and a ground electrode of an external substrate are connected to each other by a conductor pin, thereby decreasing the shield resistance. A high frequency module 1 according to the present invention is provided with: a substrate 2; a first component 4 that is mounted on an upper surface 2a of the substrate 2; a second component 5 that is mounted on a lower surface 2b of the substrate 2; an upper sealing resin layer 6 and a lower sealing resin layer 7; a conductor pin 8; and a shield layer 9. The conductor pin 8 has: a terminal part 8a which is exposed from a lower surface 7a of the lower sealing resin layer 7 and is connected to a ground electrode of an external substrate; and a shield connection part 8b which is exposed from a lateral surface 7b of the lower sealing resin layer 7 and is connected to the shield layer 9. Since the terminal part 8a of the conductor pin 8 is connected to the ground electrode, the shield layer 9 is connected to the ground potential with the shortest distance and thus the shield resistance is able to be decreased.
(FR) L'invention concerne un module haute fréquence dont la performance de blindage est stable, et dans lequel une couche de blindage et une électrode de masse d'un substrat externe sont connectées l'une à l'autre au moyen d'une broche conductrice, réduisant ainsi la résistance de blindage. Le module haute fréquence (1) comprend : un substrat (2) ; un premier composant (4) qui est monté sur une surface supérieure (2a) du substrat (2) ; un second composant (5) qui est monté sur une surface inférieure (2b) du substrat (2) ; une couche de résine d'étanchéité supérieure (6) et une couche de résine d'étanchéité inférieure (7) ; une broche conductrice (8) ; et une couche de blindage (9). La broche conductrice (8) présente : une partie borne (8a) qui est exposée depuis une surface inférieure (7a) de la couche de résine d'étanchéité inférieure (7) et connectée à une électrode de masse d'un substrat externe ; et une partie connexion de blindage (8b) qui est exposée depuis une surface latérale (7b) de la couche de résine d'étanchéité inférieure (7) et connectée à la couche de blindage (9). Étant donné que la partie borne (8a) de la broche conductrice (8) est connectée à l'électrode de masse, la couche de blindage (9) est connectée au potentiel de masse par la distance la plus courte, d'où une diminution de la résistance de blindage.
(JA) シールド層と外部基板のグランド電極を導体ピンにより接続し、シールド抵抗を下げ、シールド性能の安定した高周波モジュールを提供する。 高周波モジュール1は、基板2と基板2の上面2aに実装された第1部品4と、基板2の下面2bに実装された第2部品5と、上側封止樹脂層6および下側封止樹脂層7と、導体ピン8と、シールド層9とを備える。導体ピン8は、下側封止樹脂層7の下面7aから露出し外部基板のグランド電極に接続される端子部8aと、下側封止樹脂層7の側面7bから露出しシールド層9に接続されるシールド接続部8bとを有する。導体ピン8の端子部8aがグランド電極に接続されることにより、シールド層9が最短距離でグランド電位に接続され、シールド抵抗を下げることができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)