Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019045059) FULLERENE DERIVATIVE COMPOSITION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/045059 International Application No.: PCT/JP2018/032420
Publication Date: 07.03.2019 International Filing Date: 31.08.2018
IPC:
C07D 209/70 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/30 (2006.01) ,H01L 51/46 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
D
HETEROCYCLIC COMPOUNDS
209
Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
56
Ring systems containing three or more rings
58
[b]- or [c]-condensed
70
containing carbocyclic rings other than six-membered
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
46
Selection of materials
Applicants:
ダイキン工業株式会社 DAIKIN INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市北区中崎西2丁目4番12号 梅田センタービル Umeda Center Building, 4-12, Nakazaki-Nishi 2-Chome, Kita-ku, Osaka-shi, Osaka 5308323, JP
国立大学法人金沢大学 NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY [JP/JP]; 石川県金沢市角間町ヌ7番地 Nu 7, Kakuma-machi, Kanazawa-shi, Ishikawa 9201192, JP
Inventors:
永井 隆文 NAGAI, Takabumi; JP
岸川 洋介 KISHIKAWA, Yosuke; JP
高橋 光信 TAKAHASHI, Kohshin; JP
辛川 誠 KARAKAWA, Makoto; JP
桑原 貴之 KUWABARA, Takayuki; null
Agent:
特許業務法人三枝国際特許事務所 SAEGUSA & PARTNERS; 大阪府大阪市中央区道修町1-7-1 北浜TNKビル Kitahama TNK Building, 1-7-1, Doshomachi, Chuo-ku, Osaka-shi, Osaka 5410045, JP
Priority Data:
2017-16898601.09.2017JP
Title (EN) FULLERENE DERIVATIVE COMPOSITION
(FR) COMPOSITION À BASE DE DÉRIVÉ DE FULLERÈNE
(JA) フラーレン誘導体組成物
Abstract:
(EN) The present invention addresses the problem of providing a fullerene derivative composition which contributes to improvements in the power generation performance and structural stability of photoelectric conversion layers and which can contribute to the production of organic thin-film solar cell devices having excellent durability. The fullerene derivative composition comprises a fullerene derivative (1) represented by formula (1) [wherein R11 represents an organic group, R12 represents an organic group, and ring A represents a fullerene ring] and a fullerene derivative (2) represented by formula (2) [wherein R21 represents an organic group, R22 represents an organic group, R23 represents an organic group, and ring A represents a fullerene ring].
(FR) La présente invention aborde le problème de la fourniture d'une composition à base de dérivé de fullerène qui contribue à des améliorations de la performance de génération d'énergie, et de la stabilité structurelle de couches destinées à la conversion photoélectrique, et qui peut contribuer à la production de dispositifs de cellule solaire à couche mince organique ayant une excellente durabilité. La présente invention concerne une composition à base de dérivé de fullerène qui comprend un dérivé de fullerène (1) représenté par la formule (1) [dans laquelle R11 représente un groupe organique, R12 représente un groupe organique, et l'anneau A représente un anneau de fullerène] et un dérivé de fullerène (2) représenté par la formule (2) [dans laquelle R21 représente un groupe organique, R22 représente un groupe organique, R23 représente un groupe organique, et l'anneau A représente un anneau de fullerène].
(JA) 本発明は、光電変換層の発電性能、及び構造安定性の向上に寄与し、及び、耐久性に優れた有機薄膜太陽電池デバイス製造に貢献できるフラーレン誘導体組成物等の提供を課題とする。前記課題は、式(1):[式中、R11は、有機基を表し、R12は、有機基を表し、及び環Aは、フラーレン環を表す。]で表されるフラーレン誘導体(1)、及び式(2):[式中、R21は、有機基を表し、R22は、有機基を表し、R23は、有機基を表し、及び環Aは、フラーレン環を表す。]で表されるフラーレン誘導体(2)を含有する、フラーレン誘導体組成物によって達成される。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)