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1. (WO2019045055) SPIN ORBIT TORQUE-TYPE MAGNETIZATION SWITCHING ELEMENT AND MAGNETIC MEMORY
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Pub. No.: WO/2019/045055 International Application No.: PCT/JP2018/032404
Publication Date: 07.03.2019 International Filing Date: 31.08.2018
IPC:
H01L 29/82 (2006.01) ,H01L 21/8239 (2006.01) ,H01L 27/105 (2006.01) ,H01L 43/08 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都中央区日本橋二丁目5番1号 2-5-1, Nihonbashi, Chuo-ku, Tokyo 1036128, JP
Inventors:
須田 慶太 SUDA Keita; JP
佐々木 智生 SASAKI Tomoyuki; JP
Agent:
棚井 澄雄 TANAI Sumio; JP
荒 則彦 ARA Norihiko; JP
飯田 雅人 IIDA Masato; JP
荻野 彰広 OGINO Akihiro; JP
Priority Data:
2017-16973304.09.2017JP
Title (EN) SPIN ORBIT TORQUE-TYPE MAGNETIZATION SWITCHING ELEMENT AND MAGNETIC MEMORY
(FR) ÉLÉMENT DE COMMUTATION DE MAGNÉTISATION DE TYPE COUPLE SPIN-ORBITE ET MÉMOIRE MAGNÉTIQUE
(JA) スピン軌道トルク型磁化反転素子及び磁気メモリ
Abstract:
(EN) A spin orbit torque-type magnetization switching element according to the present embodiment is provided with: a ferromagnetic metal layer in which magnetization direction switching occurs; a spin orbit torque wire which extends in a first direction intersecting a stacking direction of the ferromagnetic metal layer, and which is bonded to the ferromagnetic metal layer; and two via wires which extend from a surface of the spin orbit torque wire on the opposite side from the ferromagnetic metal layer in an intersecting direction, and which is connected to a semiconductor circuit. A via-to-via distance of the two via wire in the first direction is smaller than a width of the ferromagnetic metal layer in the first direction.
(FR) Un élément de commutation de magnétisation de type couple spin-orbite selon le présent mode de réalisation de l'invention comporte : une couche métallique ferromagnétique dans laquelle une commutation de direction de magnétisation se produit; un fil de couple spin-orbite qui s'étend dans une première direction croisant une direction d'empilement de la couche métallique ferromagnétique, et qui est lié à la couche métallique ferromagnétique; et deux fils d'interconnexion qui s'étendent à partir d'une surface du fil de couple spin-orbite sur le côté opposé à la couche métallique ferromagnétique dans une direction d'intersection, et qui est connecté à un circuit semi-conducteur. Une distance entre trou d'interconnexion des deux fils d'interconnexion dans la première direction est inférieure à une largeur de la couche métallique ferromagnétique dans la première direction.
(JA) 本実施形態にかかるスピン軌道トルク型磁化反転素子は、磁化方向が変化する強磁性金属層と、前記強磁性金属層の積層方向に対して交差する第1の方向に延在し、前記強磁性金属層に接合するスピン軌道トルク配線と、前記スピン軌道トルク配線の前記強磁性金属層と反対側の面から交差する方向に延在し、半導体回路に接続される2つのビア配線と、を備え、前記2つのビア配線の前記第1の方向におけるビア間距離は、前記強磁性金属層の前記第1の方向における幅より短い。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)