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1. (WO2019044850) COMPONENT AND SEMICONDUCTOR MANUFACTURING APPARATUS
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Pub. No.: WO/2019/044850 International Application No.: PCT/JP2018/031817
Publication Date: 07.03.2019 International Filing Date: 28.08.2018
IPC:
H01L 21/3065 (2006.01) ,C23C 14/08 (2006.01) ,C23C 14/28 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
24
Vacuum evaporation
28
by wave energy or particle radiation
Applicants:
学校法人 芝浦工業大学 SHIBAURA INSTITUTE OF TECHNOLOGY [JP/JP]; 東京都江東区豊洲三丁目7番5号 7-5, Toyosu 3-chome, Koto-ku, Tokyo 1358548, JP
東芝マテリアル株式会社 TOSHIBA MATERIALS CO., LTD. [JP/JP]; 神奈川県横浜市磯子区新杉田町8番地 8, Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa 2358522, JP
Inventors:
湯本 敦史 YUMOTO Atsushi; JP
菅野 智広 SUGANO Tomohiro; JP
日野 高志 HINO Takashi; JP
井上 哲夫 INOUE Tetsuo; JP
齋藤 秀一 SAITO Shuichi; JP
Agent:
特許業務法人サクラ国際特許事務所 SAKURA PATENT OFFICE, P.C.; 東京都千代田区内神田一丁目18番14号 ヨシザワビル Yoshizawa Bldg., 18-14, Uchikanda 1-chome, Chiyoda-ku, Tokyo 1010047, JP
Priority Data:
2017-16852401.09.2017JP
Title (EN) COMPONENT AND SEMICONDUCTOR MANUFACTURING APPARATUS
(FR) COMPOSANT ET APPAREIL DE FABRICATION DE SEMI-CONDUCTEUR
(JA) 部品および半導体製造装置
Abstract:
(EN) This component is provided with a film that contains yttrium oxide. A cross-sectional surface of the film has a first portion, a second portion and a third portion; and the first to third portions are away from each other by 0.5 mm or more. The Vickers hardness B1 measured in the first portion, the Vickers hardness B2 measured in the second portion, the Vickers hardness B3 measured in the third portion, and the average A of the Vickers hardnesses B1 to B3 respectively have values that satisfy 0.8A ≤ B1 ≤ 1.2A, 0.8A ≤ B2 ≤ 1.2A and 0.8A ≤ B3 ≤ 1.2A.
(FR) L'invention concerne un composant comprenant un film qui contient de l'oxyde d'yttrium. Une surface de section transversale du film a une première partie, une seconde partie et une troisième partie ; et les première à troisième parties sont éloignées les unes des autres d'au minimum 0,5 mm. La dureté Vickers B1 mesurée dans la première partie, la dureté Vickers B2 mesurée dans la seconde partie, la dureté Vickers B3 mesurée dans la troisième partie, et la moyenne A des duretés Vickers B1 à B3 ont respectivement des valeurs qui satisfont à 0,8A ≤ B1 ≤ 1,2A, 0,8A ≤ B2 ≤ 1,2A et 0,8A ≤ B3 ≤ 1,2A
(JA) 部品は、酸化イットリウムを含む膜を具備する。膜の断面は、第1の箇所と、第2の箇所と、第3の箇所と、を有し、第1ないし第3の箇所が互いに0.5mm以上離れている。第1の箇所で測定されるビッカース硬さB1、第2の箇所で測定されるビッカース硬さB2、第3の箇所で測定されるビッカース硬さB3、およびビッカース硬さB1ないしB3の平均値Aは、それぞれ0.8A≦B1≦1.2A、0.8A≦B2≦1.2A、および0.8A≦B3≦1.2Aを満足する数である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)