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1. WO2019044601 - METHOD FOR PROCESSING TUNGSTEN OXIDE AND METHOD FOR PRODUCING TUNGSTEN HEXAFLUORIDE

Publication Number WO/2019/044601
Publication Date 07.03.2019
International Application No. PCT/JP2018/030913
International Filing Date 22.08.2018
IPC
C01G 41/04 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
41Compounds of tungsten
04Halides
H01L 21/302 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
CPC
C01G 41/04
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
41Compounds of tungsten
04Halides
C23F 15/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
15Other methods of preventing corrosion or incrustation
C23G 5/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
GCLEANING OR DEGREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
5Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
H01L 21/302
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
302to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
Applicants
  • セントラル硝子株式会社 CENTRAL GLASS COMPANY, LIMITED [JP]/[JP]
Inventors
  • 長友 真聖 NAGATOMO, Masakiyo
  • 八尾 章史 YAO, Akifumi
  • 北 拓也 KITA, Takuya
  • 上島 修平 UESHIMA, Shuhei
  • 菊池 亜紀応 KIKUCHI, Akiou
Agents
  • 小林 博通 KOBAYASHI, Hiromichi
  • 富岡 潔 TOMIOKA, Kiyoshi
  • 山口 幸二 YAMAGUCHI, Koji
Priority Data
2017-16393829.08.2017JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PROCESSING TUNGSTEN OXIDE AND METHOD FOR PRODUCING TUNGSTEN HEXAFLUORIDE
(FR) PROCÉDÉ DE TRAITEMENT D'OXYDE DE TUNGSTÈNE ET PROCÉDÉ DE PRODUCTION D'HEXAFLUORURE DE TUNGSTÈNE
(JA) タングステン酸化物の処理方法及び六フッ化タングステンの製造方法
Abstract
(EN)
Provided is a method for converting tungsten oxide into a substance having a high vapor pressure selectively with respect to tungsten metal at a reaction temperature that is lower than 500°C without generating oxygen and water due to the reaction. Although tungsten hexafluoride scarcely reacts with tungsten metal, tungsten oxide is brought into contact with tungsten hexafluoride according to the present invention and is converted into a fluorinated tungstate having a high vapor pressure by a reaction expressed by reaction formula (7) or the like. WO3 + 2WF6 → 3WOF4 Reaction formula (7)
(FR)
La présente invention concerne un procédé de conversion d'oxyde de tungstène en une substance ayant une pression de vapeur élevée sélectivement par rapport à un métal tungstène à une température réactionnelle qui est inférieure à 500 °C sans générer d'oxygène et d'eau dû à la réaction. Bien que l'hexafluorure de tungstène réagisse rarement avec le métal tungstène, l'oxyde de tungstène est porté en contact avec l'hexafluorure de tungstène selon la présente invention et est converti en un tungstate fluoré ayant une pression de vapeur élevée par une réaction exprimée par la formule réactionnelle (7) ou similaire. WO3 + 2WF6 → 3WOF4 Formule réactionnelle (7)
(JA)
反応温度が500℃未満で、かつ反応によって酸素及び水を生成させることなく、金属タングステンに対して選択的にタングステン酸化物を蒸気圧の高い物質へ変換する方法を提供する。六フッ化タングステンは金属タングステンとほとんど反応しないが、本発明の方法では、タングステン酸化物を六フッ化タングステンに接触させて、反応式(7)に示す反応などにより、蒸気圧の高いタングステン酸フッ化物に転化される。 WO3+2WF6→3WOF4 …反応式(7)
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