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1. (WO2019044601) METHOD FOR PROCESSING TUNGSTEN OXIDE AND METHOD FOR PRODUCING TUNGSTEN HEXAFLUORIDE
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Pub. No.: WO/2019/044601 International Application No.: PCT/JP2018/030913
Publication Date: 07.03.2019 International Filing Date: 22.08.2018
IPC:
C01G 41/04 (2006.01) ,H01L 21/302 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
41
Compounds of tungsten
04
Halides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
Applicants:
セントラル硝子株式会社 CENTRAL GLASS COMPANY, LIMITED [JP/JP]; 山口県宇部市大字沖宇部5253番地 5253, Oaza Okiube, Ube-shi, Yamaguchi 7550001, JP
Inventors:
長友 真聖 NAGATOMO, Masakiyo; JP
八尾 章史 YAO, Akifumi; JP
北 拓也 KITA, Takuya; JP
上島 修平 UESHIMA, Shuhei; JP
菊池 亜紀応 KIKUCHI, Akiou; JP
Agent:
小林 博通 KOBAYASHI, Hiromichi; JP
富岡 潔 TOMIOKA, Kiyoshi; JP
山口 幸二 YAMAGUCHI, Koji; JP
Priority Data:
2017-16393829.08.2017JP
Title (EN) METHOD FOR PROCESSING TUNGSTEN OXIDE AND METHOD FOR PRODUCING TUNGSTEN HEXAFLUORIDE
(FR) PROCÉDÉ DE TRAITEMENT D'OXYDE DE TUNGSTÈNE ET PROCÉDÉ DE PRODUCTION D'HEXAFLUORURE DE TUNGSTÈNE
(JA) タングステン酸化物の処理方法及び六フッ化タングステンの製造方法
Abstract:
(EN) Provided is a method for converting tungsten oxide into a substance having a high vapor pressure selectively with respect to tungsten metal at a reaction temperature that is lower than 500°C without generating oxygen and water due to the reaction. Although tungsten hexafluoride scarcely reacts with tungsten metal, tungsten oxide is brought into contact with tungsten hexafluoride according to the present invention and is converted into a fluorinated tungstate having a high vapor pressure by a reaction expressed by reaction formula (7) or the like. WO3 + 2WF6 → 3WOF4 Reaction formula (7)
(FR) La présente invention concerne un procédé de conversion d'oxyde de tungstène en une substance ayant une pression de vapeur élevée sélectivement par rapport à un métal tungstène à une température réactionnelle qui est inférieure à 500 °C sans générer d'oxygène et d'eau dû à la réaction. Bien que l'hexafluorure de tungstène réagisse rarement avec le métal tungstène, l'oxyde de tungstène est porté en contact avec l'hexafluorure de tungstène selon la présente invention et est converti en un tungstate fluoré ayant une pression de vapeur élevée par une réaction exprimée par la formule réactionnelle (7) ou similaire. WO3 + 2WF6 → 3WOF4 Formule réactionnelle (7)
(JA) 反応温度が500℃未満で、かつ反応によって酸素及び水を生成させることなく、金属タングステンに対して選択的にタングステン酸化物を蒸気圧の高い物質へ変換する方法を提供する。六フッ化タングステンは金属タングステンとほとんど反応しないが、本発明の方法では、タングステン酸化物を六フッ化タングステンに接触させて、反応式(7)に示す反応などにより、蒸気圧の高いタングステン酸フッ化物に転化される。 WO3+2WF6→3WOF4 …反応式(7)
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)