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1. (WO2019044548) SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
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Pub. No.: WO/2019/044548 International Application No.: PCT/JP2018/030547
Publication Date: 07.03.2019 International Filing Date: 17.08.2018
IPC:
H01L 21/304 (2006.01) ,H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors:
飯野 正 IINO, Tadashi; JP
甲斐 義広 KAI, Yoshihiro; JP
徳永 容一 TOKUNAGA, Yoichi; JP
緒方 信博 OGATA, Nobuhiro; JP
東島 治郎 HIGASHIJIMA, Jiro; JP
Agent:
特許業務法人酒井国際特許事務所 SAKAI INTERNATIONAL PATENT OFFICE; 東京都千代田区霞が関3丁目8番1号 虎の門三井ビルディング Toranomon Mitsui Building, 8-1, Kasumigaseki 3-chome, Chiyoda-ku, Tokyo 1000013, JP
Priority Data:
2017-16458429.08.2017JP
Title (EN) SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
(FR) APPAREIL DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) The substrate treatment apparatus according to one embodiment of the present invention is provided with a treatment unit (16), a control unit (18), and a measurement unit (102). The treatment unit comprises: a holding part (31) which holds and rotates a substrate; a nozzle (41) from which treatment liquid is discharged; and a conductive piping part (44) through which the treatment liquid is supplied to the nozzle. The control unit causes the treatment unit to carry out a liquid treatment for treating the substrate by supplying the treatment liquid from the nozzle to the substrate that is being rotated and held by the holding part. The measurement unit measures a streaming current generated as the treatment liquid flows through the piping part. Further, the control unit monitors the liquid treatment on the basis of the measurement result provided by the measurement unit.
(FR) Selon le mode de réalisation de la présente invention, l'appareil de traitement de substrat est pourvu d'une unité de traitement (16), d'une unité de commande (18) et d'une unité de mesure (102). L'unité de traitement comprend : une partie de maintien (31) qui maintient et fait tourner un substrat; une buse (41) à partir de laquelle le liquide de traitement est évacué; et une partie de tuyauterie conductrice (44) à travers laquelle le liquide de traitement est fourni à la buse. L'unité de commande amène l'unité de traitement à effectuer un traitement liquide pour traiter le substrat en apportant le liquide de traitement depuis la buse vers le substrat qui est en rotation et maintenu par la partie de maintien. L'unité de mesure mesure un courant de diffusion en continu généré lorsque le liquide de traitement s'écoule à travers la partie de tuyauterie. En outre, l'unité de commande surveille le traitement de liquide sur la base du résultat de mesure fourni par l'unité de mesure.
(JA) 実施形態に係る基板処理装置は、処理ユニット(16)と、制御部(18)と、測定部(102)とを備える。処理ユニットは、基板を保持して回転させる保持部(31)、処理液を吐出するノズル(41)およびノズルに処理液を供給する導電性の配管部(44)を含む。制御部は、保持部に保持されて回転する基板に対し、ノズルから処理液を供給することによって基板を処理する液処理を処理ユニットに対して実行させる。測定部は、配管部を処理液が流れることによって生じる流動電流を測定する。また、制御部は、測定部による測定結果に基づいて液処理を監視する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)