Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019044547) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044547 International Application No.: PCT/JP2018/030541
Publication Date: 07.03.2019 International Filing Date: 17.08.2018
IPC:
G03F 7/004 (2006.01) ,C08F 12/24 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
12
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
02
Monomers containing only one unsaturated aliphatic radical
04
containing one ring
14
substituted by hetero atoms or groups containing hetero atoms
22
Oxygen
24
Phenols or alcohols
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
米久田 康智 YONEKUTA Yasunori; JP
畠山 直也 HATAKEYAMA Naoya; JP
吉村 務 YOSHIMURA Tsutomu; JP
東 耕平 HIGASHI Kohei; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-16776831.08.2017JP
Title (EN) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD AND METHOD FOR PRODUCING ELECTRONIC DEVICE
(FR) COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTIVE OU SENSIBLE AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIFS ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
Abstract:
(EN) Provided is an active light sensitive or radiation sensitive resin composition which enables the formation of a pattern having excellent resolution and shape characteristics even if used in thick film applications. Also provided are: a resist film which uses this active light sensitive or radiation sensitive resin composition; a pattern forming method; and a method for producing an electronic device. An active light sensitive or radiation sensitive resin composition according to the present invention is a negative composition that is used for the formation of a pattern having a film thickness of 1 μm or more, and contains at least one acid generator which is selected from the group consisting of compounds represented by general formula (ZI-3) and compounds represented by general formula (ZI-4), a crosslinking agent, a resin which contains a reactive group that is reactive with the crosslinking agent, and at least one resin which is selected from the group consisting of resins having a structure wherein a reactive group is protected by a leaving group that is decomposed and separated by the action of an acid.
(FR) L'invention concerne une composition de résine sensible à la lumière active ou sensible au rayonnement qui permet la formation d'un motif ayant d'excellentes caractéristiques de résolution et de forme même si elle est utilisée dans des applications sur film épais. L'invention concerne également : un film de réserve qui utilise cette composition de résine sensible à la lumière active ou sensible au rayonnement ; un procédé de formation de motif ; et un procédé de production d'un dispositif électronique. Selon la présente invention, une composition de résine sensible à la lumière active ou sensible au rayonnement est une composition négative qui est utilisée pour la formation d'un motif ayant une épaisseur de film de 1 µm ou plus et qui contient au moins un générateur d'acide qui est choisi parmi le groupe constitué de composés représentés par la formule générale (ZI-3) et de composés représentés par la formule générale (ZI-4), un agent de réticulation, une résine qui contient un groupe réactif qui est réactif avec l'agent de réticulation, et au moins une résine qui est choisie parmi le groupe constitué par des résines ayant une structure dans laquelle un groupe réactif est protégé par un groupe partant qui est décomposé et séparé par l'action d'un acide.
(JA) 厚膜用途に適用した際にも、形成されるパターンの解像性及び形状特性に優れる、感活性光線性又は感放射線性樹脂組成物を提供する。また、上記感活性光線性又は感放射線性樹脂組成物を用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法を提供する。感活性光線性又は感放射線性樹脂組成物は、膜厚が1μm以上のパターンの形成に用いられる、ネガ型の組成物であって、一般式(ZI-3)で表される化合物及び一般式(ZI-4)で表される化合物からなる群より選ばれる少なくとも1種の酸発生剤と、架橋剤と、架橋剤と反応可能な反応基を含む樹脂、及び、反応基が酸の作用により分解して脱離する脱離基で保護された構造を含む樹脂からなる群より選ばれる少なくとも1種の樹脂と、を含む。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)