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1. (WO2019044538) MULTILAYER LENS STRUCTURE, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE
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Pub. No.: WO/2019/044538 International Application No.: PCT/JP2018/030492
Publication Date: 07.03.2019 International Filing Date: 17.08.2018
IPC:
G02B 7/02 (2006.01) ,B29D 11/00 (2006.01) ,G02B 3/00 (2006.01) ,G02B 7/04 (2006.01) ,G02B 7/34 (2006.01) ,G02B 7/36 (2006.01) ,G03B 15/00 (2006.01) ,H01L 27/146 (2006.01) ,H01L 31/0232 (2014.01) ,H01L 31/10 (2006.01)
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
7
Mountings, adjusting means, or light-tight connections, for optical elements
02
for lenses
B PERFORMING OPERATIONS; TRANSPORTING
29
WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
D
PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
11
Producing optical elements, e.g. lenses or prisms
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
3
Simple or compound lenses
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
7
Mountings, adjusting means, or light-tight connections, for optical elements
02
for lenses
04
with mechanism for focusing or varying magnification
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
7
Mountings, adjusting means, or light-tight connections, for optical elements
28
Systems for automatic generation of focusing signals
34
using different areas in a pupil plane
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
7
Mountings, adjusting means, or light-tight connections, for optical elements
28
Systems for automatic generation of focusing signals
36
using image sharpness techniques
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
B
APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
15
Special procedures for taking photographs; Apparatus therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0232
Optical elements or arrangements associated with the device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08
in which radiation controls flow of current through the device, e.g. photoresistors
10
characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
吉岡 浩孝 YOSHIOKA Hirotaka; JP
Agent:
西川 孝 NISHIKAWA Takashi; JP
稲本 義雄 INAMOTO Yoshio; JP
Priority Data:
2017-16782731.08.2017JP
Title (EN) MULTILAYER LENS STRUCTURE, METHOD FOR PRODUCING SAME, AND ELECTRONIC DEVICE
(FR) ÉLÉMENT DE LENTILLE MULTICOUCHE, PROCÉDÉ DE FABRICATION DE CELUI-CI, ET DISPOSITIF ÉLECTRONIQUE
(JA) 積層レンズ構造体およびその製造方法、並びに、電子機器
Abstract:
(EN) The present technique relates to: a multilayer lens structure which is capable of tolerating variation in the amount of dripped energy curable resin that serves as a lens material; a method for producing this multilayer lens structure; and an electronic device. A multilayer lens structure according to the present invention comprises at least one first substrate with a lens and at least one second substrate with a lens, each of said substrate with a lens comprising a lens resin part that forms a lens and a carrier substrate that supports the lens resin part. The carrier substrate of the first substrate with a lens is configured by laminating a plurality of carrier constituent substrates in the thickness direction; and the carrier substrate of the second substrate with a lens is configured from a single carrier constituent substrate. The first substrate with a lens is provided with a groove in the lateral wall of a through hole that is formed in the carrier substrate. The present technique is applicable, for example, to a camera module and the like.
(FR) La présente technique concerne : une structure de lentille multicouche qui est capable de tolérer une variation de la quantité de résine durcissable par apport d'énergie goutte à goutte qui sert de matériau de lentille ; un procédé de production de cette structure de lentille multicouche ; et un dispositif électronique. Une structure de lentille multicouche selon la présente invention comprend au moins un premier substrat avec une lentille et au moins un second substrat avec une lentille, chacun desdits substrats avec une lentille comprenant une partie de résine de lentille qui forme une lentille et un substrat de support qui supporte la partie de résine de lentille. Le substrat de support du premier substrat avec une lentille est configuré par stratification d'une pluralité de substrats constitutifs de support dans la direction de l'épaisseur ; et le substrat de support du second substrat avec une lentille est configuré à partir d'un substrat unique constitutif de support. Le premier substrat avec une lentille est pourvu d'une rainure dans la paroi latérale d'un trou traversant qui est formé dans le substrat de support. La présente technique est applicable, par exemple, à des modules de caméra et analogue.
(JA) 本技術は、レンズ材料であるエネルギー硬化性樹脂の滴下量のばらつきを許容することができるようにする積層レンズ構造体およびその製造方法、並びに、電子機器に関する。 積層レンズ構造体は、レンズを形成するレンズ樹脂部と、レンズ樹脂部を担持する担体基板とを含むレンズ付き基板として、第1のレンズ付き基板と第2のレンズ付き基板のそれぞれを少なくとも1枚以上含む。第1のレンズ付き基板の担体基板は、複数枚の担体構成基板を厚さ方向に積層して構成され、第2のレンズ付き基板の担体基板は、1枚の担体構成基板で構成される。第1のレンズ付き基板は、担体基板に形成された貫通孔の側壁に、溝部を備える。本技術は、例えば、カメラモジュール等に適用できる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)