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1. (WO2019044510) PATTERN FORMATION METHOD, ION INJECTION METHOD, LAMINATE BODY, KIT, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
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Pub. No.: WO/2019/044510 International Application No.: PCT/JP2018/030373
Publication Date: 07.03.2019 International Filing Date: 15.08.2018
IPC:
G03F 7/11 (2006.01) ,C08F 230/04 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/039 (2006.01) ,G03F 7/075 (2006.01) ,G03F 7/20 (2006.01) ,G03F 7/26 (2006.01) ,G03F 7/40 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
09
characterised by structural details, e.g. supports, auxiliary layers
11
having cover layers or intermediate layers, e.g. subbing layers
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
230
Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing phosphorus, selenium, tellurium, or a metal
04
containing a metal
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
075
Silicon-containing compounds
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26
Processing photosensitive materials; Apparatus therefor
40
Treatment after imagewise removal, e.g. baking
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
畠山 直也 HATAKEYAMA Naoya; JP
米久田 康智 YONEKUTA Yasunori; JP
東 耕平 HIGASHI Kohei; JP
西田 陽一 NISHIDA Yoichi; JP
藤田 光宏 FUJITA Mitsuhiro; JP
Agent:
特許業務法人航栄特許事務所 KOH-EI PATENT FIRM, P.C.; 東京都港区西新橋一丁目7番13号 虎ノ門イーストビルディング9階 Toranomon East Bldg. 9F, 7-13, Nishi-Shimbashi 1-chome, Minato-ku, Tokyo 1050003, JP
Priority Data:
2017-16590930.08.2017JP
Title (EN) PATTERN FORMATION METHOD, ION INJECTION METHOD, LAMINATE BODY, KIT, COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
(FR) PROCÉDÉ DE FORMATION DE MOTIF, PROCÉDÉ D'IMPLANTATION IONIQUE, STRATIFIÉ, KIT, COMPOSITION POUR FORMATION DE FILM DE SOUS-COUCHE DE RÉSERVE, COMPOSITION DE RÉSERVE, ET PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE
(JA) パターン形成方法、イオン注入方法、積層体、キット、レジスト下層膜形成用組成物、レジスト組成物、及び、電子デバイスの製造方法
Abstract:
(EN) The present invention provides a pattern formation method and an ion-injection method in which said pattern formation method is used, the pattern formation method comprising: (1) a step for forming a resist underlayer film on a substrate to be processed; (2) a step for forming a resist film on the resist underlayer film, using a resist composition that contains a resin having atoms selected from the group consisting of (A) Si atoms and Ti atoms; (3) a step for exposing the resist film; (4) a step for developing the exposed resist film and forming a resist pattern; (5) a step for forming a pattern by processing the resist underlayer film, using the resist pattern as a mask, wherein the thickness of the resist underlayer film is at least 2.5 µm, and the thickness of the resist film does not exceed 1 µm. The present invention furthermore provides: a laminate, a kit, a composition for forming the resist underlayer film, and the resist composition used in the method for forming a pattern; and a method for manufacturing an electronic device.
(FR) L'invention fournit un procédé de formation de motif qui contient (1) une étape au cours de laquelle un film de sous-couche de réserve est formé sur un substrat à traiter, (2) une étape au cours de laquelle un film de réserve est formé sur le film de sous-couche de réserve, au moyen d'une composition de réserve comprenant une résine ayant un atome choisi dans un groupe constitué d'un atome de Si et d'un atome de Ti, (3) une étape au cours de laquelle le film de réserve est exposé à la lumière, (4) une étape au cours de laquelle un motif de réserve est formé par développement du film de réserve ainsi exposé à la lumière, et (5) une étape au cours de laquelle un motif est formé par usinage du film de sous-couche de réserve avec le motif de réserve pour masque. Plus précisément, ce procédé de formation de motif est tel que l'épaisseur du film de sous-couche de réserve est supérieure ou égale à 2,5μm, et l'épaisseur du film de réserve est inférieure ou égale à 1μm. L'invention fournit également un procédé d'implantation ionique mettant en œuvre ce procédé de formation de motif, un stratifié, un kit, une composition pour formation de film de sous-couche de réserve ainsi qu'une composition de réserve mis en œuvre dans ce procédé de formation de motif, et un procédé de fabrication de dispositif électronique.
(JA) 本発明により、(1)被処理基板上に、レジスト下層膜を形成する工程と、(2)レジスト下層膜上に、(A)Si原子及びTi原子からなる群より選択される原子を有する樹脂を含有するレジスト組成物により、レジスト膜を形成する工程と、(3)レジスト膜を露光する工程と、(4)露光されたレジスト膜を現像してレジストパターンを形成する工程と、(5)レジストパターンをマスクとして、レジスト下層膜を加工してパターンを形成する工程、とを含むパターン形成方法であって、レジスト下層膜の膜厚が2.5μm以上であり、レジスト膜の膜厚が1μm以下である、パターン形成方法、及び、これを用いたイオン注入方法、並びに、上記パターン形成方法に用いられる、積層体、キット、レジスト下層膜形成用組成物、レジスト組成物、及び、電子デバイスの製造方法が提供される。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)