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1. (WO2019044448) METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING RAW MATERIAL, AND THIN FILM PRODUCTION METHOD
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Pub. No.: WO/2019/044448 International Application No.: PCT/JP2018/029923
Publication Date: 07.03.2019 International Filing Date: 09.08.2018
IPC:
C07F 5/00 (2006.01) ,C23C 16/18 (2006.01) ,H01L 21/31 (2006.01)
C CHEMISTRY; METALLURGY
07
ORGANIC CHEMISTRY
F
ACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
5
Compounds containing elements of the 3rd Group of the Periodic System
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06
characterised by the deposition of metallic material
18
from metallo-organic compounds
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
Applicants:
株式会社ADEKA ADEKA CORPORATION [JP/JP]; 東京都荒川区東尾久七丁目2番35号 2-35, Higashiogu 7-chome, Arakawa-ku, Tokyo 1168554, JP
Inventors:
岡田 奈奈 OKADA, Nana; JP
畑▲瀬▼ 雅子 HATASE, Masako; JP
西田 章浩 NISHIDA, Akihiro; JP
桜井 淳 SAKURAI, Atsushi; JP
Agent:
曾我 道治 SOGA, Michiharu; JP
梶並 順 KAJINAMI, Jun; JP
大宅 一宏 OHYA, Kazuhiro; JP
Priority Data:
2017-16523530.08.2017JP
Title (EN) METAL ALKOXIDE COMPOUND, THIN-FILM-FORMING RAW MATERIAL, AND THIN FILM PRODUCTION METHOD
(FR) COMPOSÉ ALCOXYDE MÉTALLIQUE, MATIÈRE PREMIÈRE DE FORMATION DE FILM MINCE, ET PROCÉDÉ DE PRODUCTION DE FILM MINCE
(JA) 金属アルコキシド化合物、薄膜形成用原料及び薄膜の製造方法
Abstract:
(EN) The present invention provides a metal alkoxide compound represented by general formula (1), a thin-film-forming raw material comprising this compound, and a thin film production method using this raw material to form a thin film containing a metal. [Chem. 1] (where: R1 represents a hydrogen atom or an alkyl group containing 1 to 4 carbon atoms; R2 represents an isopropyl group, a secondary butyl group, a tertiary butyl group, a secondary pentyl, a 1-ethylpropyl group, or a tertiary pentyl group; R3 represents a hydrogen or an alkyl group containing 1 to 4 carbon atoms; R4 represents an alkyl group containing 1 to 4 carbon atoms; M represents a scandium atom, an yttrium atom, a lanthanum atom, a cerium atom, a praseodymium atom, a neodymium atom, a promethium atom, a samarium atom, an europium atom, a gadolinium atom, a terbium atom, a dysprosium atom, a holmium atom, an erbium atom, a thulium atom, an ytterbium atom, or a lutetium atom; and n represents the valence of the atom represented by M; with the proviso that, if M represents a lanthanum atom, R2 represents a secondary butyl group, a tertiary butyl group, a secondary pentyl, a 1-ethylpropyl group, or a tertiary pentyl group.)
(FR) La présente invention concerne un composé alcoxyde métallique représenté par la formule générale (1), une matière première de formation de film mince comprenant ce composé, et un procédé de production de film mince utilisant cette matière première pour former un film mince contenant un métal. [Formule chimique 1] (où : R1 représente un atome d'hydrogène ou un groupe alkyle contenant de 1 à 4 atomes de carbone; R2 représente un groupe isopropyle, un groupe butyle secondaire, un groupe butyle tertiaire, un pentyle secondaire, un groupe 1-éthylpropyle, ou un groupe pentyle tertiaire; R3 représente un atome d'hydrogène ou un groupe alkyle contenant de 1 à 4 atomes de carbone; R4 représente un groupe alkyle contenant de 1 à 4 atomes de carbone; M représente un atome de scandium, un atome d'yttrium, un atome de lanthane, un atome de cérium, un atome de praséodyme, un atome de néodyme, un atome de prométhium, un atome de samarium, un atome d'europium, un atome de gadolinium, un atome de terbium, un atome de dysprosium, un atome d'holmium, un atome d'erbium, un atome de thulium, un atome d'ytterbium ou un atome de lutécium; et n représente la valence de l'atome représenté par M; à condition que, si M représente un atome de lanthane, R2 représente un groupe butyle secondaire, un groupe butyle tertiaire, un pentyle secondaire, un groupe 1-éthylpropyle, ou un groupe pentyle tertiaire.)
(JA) 本発明は、下記一般式(1)で表される金属アルコキシド化合物、これを含有してなる薄膜形成用原料、および該原料を用いて金属を含有する薄膜を形成する薄膜の製造方法を提供することにある: 【化1】 (式中、R1は、水素原子または炭素原子数1~4のアルキル基を表し、R2は、イソプロピル基、第2ブチル基、第3ブチル基、第2ペンチル、1-エチルプロピル基または第3ペンチル基を表し、R3は、水素または炭素原子数1~4のアルキル基を表し、R4は、炭素原子数1~4のアルキル基を表し、Mは、スカンジウム原子、イットリウム原子、ランタン原子、セリウム原子、プラセオジム原子、ネオジム原子、プロメチウム原子、サマリウム原子、ユウロピウム原子、ガドリニウム原子、テルビウム原子、ジスプロシウム原子、ホルミウム原子、エルビウム原子、ツリウム原子、イッテルビウム原子またはルテチウム原子を表し、nは、Mで表される原子の価数を表す。ただし、Mがランタン原子である場合、R2は第2ブチル基、第3ブチル基、第2ペンチル、1-エチルプロピル基または第3ペンチル基である。)
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)