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1. (WO2019044440) VAPOR-PHASE GROWTH DEVICE AND VAPOR-PHASE GROWTH METHOD
Latest bibliographic data on file with the International BureauSubmit observation

Pub. No.: WO/2019/044440 International Application No.: PCT/JP2018/029783
Publication Date: 07.03.2019 International Filing Date: 08.08.2018
IPC:
H01L 21/205 (2006.01) ,C23C 16/42 (2006.01) ,C23C 16/44 (2006.01) ,C23C 16/455 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
Applicants:
株式会社ニューフレアテクノロジー NUFLARE TECHNOLOGY, INC. [JP/JP]; 神奈川県横浜市磯子区新杉田町8番1 8-1, Shinsugita-cho, Isogo-ku, Yokohama-shi, Kanagawa 2358522, JP
Inventors:
醍醐 佳明 DAIGO Yoshiaki; JP
石黒 暁夫 ISHIGURO Akio; JP
伊藤 英樹 ITO Hideki; JP
Agent:
池上 徹真 IKEGAMI, Tetsuma; JP
須藤 章 SUDO, Akira; JP
高下 雅弘 TAKASHITA, Masahiro; JP
Priority Data:
2017-16850801.09.2017JP
Title (EN) VAPOR-PHASE GROWTH DEVICE AND VAPOR-PHASE GROWTH METHOD
(FR) DISPOSITIF ET PROCÉDÉ DE CROISSANCE EN PHASE VAPEUR
(JA) 気相成長装置、及び、気相成長方法
Abstract:
(EN) A vapor-phase growth device of an embodiment comprises: a reaction chamber; a substrate holder that is provided inside the reaction chamber, and on which a substrate can be placed, the substrate holder having a holding wall that is capable of holding the outer periphery of the substrate while leaving a designated gap; a process gas supply part that has a first region, which is provided above the reaction chamber and in which a first process gas can be supplied to the reaction chamber, and a second region, which is provided around the first region, and in which a second process gas having a higher carbon/silicon atomic ratio than the first process gas can be supplied to the reaction chamber, the inner-periphery diameter of the second region being 75 to 130% (inclusive) of the diameter of the holding wall; a side wall provided inside the reaction chamber in a region between the process gas supply part and the substrate holder, and in which the inner-periphery diameter is 110 to 200% (inclusive) of the outer-periphery diameter of the second region; a first heater provided below the substrate holder; a second heater provided between the side wall and the inner wall of the reaction chamber; and a rotary drive mechanism that causes the substrate holder to rotate.
(FR) Selon un mode de réalisation de la présente invention, un dispositif de croissance en phase vapeur comprend : une chambre de réaction ; un support de substrat qui est disposé à l'intérieur de la chambre de réaction, et sur lequel un substrat peut être placé, le support de substrat ayant une paroi de maintien qui permet de maintenir la périphérie externe du substrat tout en laissant un espace désigné ; une partie de fourniture de gaz de traitement qui a une première région, qui est disposée au-dessus de la chambre de réaction et dans laquelle un premier gaz de traitement peut être fourni à la chambre de réaction, et une seconde région, qui est disposée autour de la première région, et dans laquelle un second gaz de traitement ayant un rapport atomique carbone/silicium plus élevé que le premier gaz de traitement peut être fourni à la chambre de réaction, le diamètre de périphérie interne de la seconde région représentant de 75 à 130 % (inclus) du diamètre de la paroi de maintien ; une paroi latérale disposée à l'intérieur de la chambre de réaction dans une région entre la partie de fourniture de gaz de traitement et le support de substrat, et dans laquelle le diamètre de périphérie interne représente de 110 à 200 % (inclus) du diamètre de périphérie externe de la seconde région ; un premier dispositif de chauffage disposé en dessous du support de substrat ; un second dispositif de chauffage disposé entre la paroi latérale et la paroi interne de la chambre de réaction ; et un mécanisme d'entraînement rotatif qui amène le support de substrat à tourner.
(JA) 実施形態の気相成長装置は、反応室と、反応室の中に設けられ、基板が載置可能であり、基板の外周を所定の間隙を有して保持可能な保持壁を有する基板保持部と、反応室の上に設けられ、第1のプロセスガスを反応室に供給可能な第1の領域と、第1の領域の周囲に設けられ第1のプロセスガスよりも炭素/シリコン原子比の高い第2のプロセスガスを反応室に供給可能な第2の領域とを有し、第2の領域の内周直径が保持壁の直径の75%以上130%以下であるプロセスガス供給部と、反応室の中の、プロセスガス供給部と基板保持部との間の領域に設けられ、内周直径が第2の領域の外周直径の110%以上200%以下である側壁と、基板保持部の下に設けられた第1のヒータと、側壁と反応室の内壁との間に設けられた第2のヒータと、基板保持部を回転させる回転駆動機構と、を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)