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1. (WO2019044412) P-TYPE SEMICONDUCTOR FILM CONTAINING HETEROFULLERENE, AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044412 International Application No.: PCT/JP2018/029502
Publication Date: 07.03.2019 International Filing Date: 07.08.2018
IPC:
H01L 51/30 (2006.01) ,C01B 32/156 (2017.01) ,C01B 32/90 (2017.01) ,C01B 32/991 (2017.01) ,H01L 29/786 (2006.01) ,H01L 51/05 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
[IPC code unknown for C01B 32/156][IPC code unknown for C01B 32/90][IPC code unknown for C01B 32/991]
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
松澤 伸行 MATSUZAWA Nobuyuki; --
笹子 勝 SASAGO Masaru; --
中 順一 NAKA Jun'ichi; --
Agent:
鎌田 健司 KAMATA Kenji; JP
前田 浩夫 MAEDA Hiroo; JP
Priority Data:
2017-16784631.08.2017JP
Title (EN) P-TYPE SEMICONDUCTOR FILM CONTAINING HETEROFULLERENE, AND ELECTRONIC DEVICE
(FR) FILM SEMI-CONDUCTEUR DE TYPE P CONTENANT UN HÉTÉROFULLERÈNE, ET DISPOSITIF ÉLECTRONIQUE
(JA) ヘテロフラーレンを含むp型半導体膜および電子デバイス
Abstract:
(EN) Provided is a p-type semiconductor film containing heterofullerene, and having a more satisfactorily level of hole mobility. The p-type semiconductor film contains heterofullerene in which the n+r (where n and r are both positive odd numbers) carbon atoms that constitute fullerene are substituted with n boron atoms and r nitrogen atoms.
(FR) L'invention concerne un film semi-conducteur de type p contenant un hétérofullerène, et présentant un niveau de mobilité des trous plus satisfaisant. Le film semi-conducteur de type p contient un hétérofullerène dans lequel les atomes de carbone n+r (n et r étant tous deux des nombres impairs positifs) qui constituent le fullerène sont substitués par n atomes de bore et r atomes d'azote.
(JA) 正孔移動度がより十分に高いヘテロフラーレンを含むp型半導体膜を提供する。p型半導体膜は、フラーレンを構成する炭素原子のうちn+r(個)(nおよびrはともに正の奇数)の炭素原子をn個のホウ素原子およびr個の窒素原子で置換したヘテロフラーレンを含む。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)