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1. (WO2019044411) HETEROFULLERENE AND N-TYPE SEMICONDUCTOR FILM USING SAME, AND ELECTRONIC DEVICE
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Pub. No.: WO/2019/044411 International Application No.: PCT/JP2018/029501
Publication Date: 07.03.2019 International Filing Date: 07.08.2018
IPC:
C01B 32/156 (2017.01) ,B82Y 30/00 (2011.01) ,B82Y 40/00 (2011.01) ,H01L 29/786 (2006.01) ,H01L 51/05 (2006.01) ,H01L 51/30 (2006.01)
[IPC code unknown for C01B 32/156]
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
30
Nano-technology for materials or surface science, e.g. nano-composites
B PERFORMING OPERATIONS; TRANSPORTING
82
NANO-TECHNOLOGY
Y
SPECIFIC USES OR APPLICATIONS OF NANO-STRUCTURES; MEASUREMENT OR ANALYSIS OF NANO-STRUCTURES; MANUFACTURE  OR TREATMENT OF NANO-STRUCTURES
40
Manufacture or treatment of nano-structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
30
Selection of materials
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
松澤 伸行 MATSUZAWA Nobuyuki; --
笹子 勝 SASAGO Masaru; --
中 順一 NAKA Jun'ichi; --
Agent:
鎌田 健司 KAMATA Kenji; JP
前田 浩夫 MAEDA Hiroo; JP
Priority Data:
2017-16729631.08.2017JP
Title (EN) HETEROFULLERENE AND N-TYPE SEMICONDUCTOR FILM USING SAME, AND ELECTRONIC DEVICE
(FR) HÉTÉROFULLERÈNE ET FILM SEMI-CONDUCTEUR DE TYPE N L'UTILISANT, ET DISPOSITIF ÉLECTRONIQUE
(JA) ヘテロフラーレンならびにそれを用いたn型半導体膜および電子デバイス
Abstract:
(EN) In this invention, the n (where n is a positive even number) carbon atoms which constitute heterofullerene are substituted with n boron atoms or n nitrogen atoms.
(FR) Selon la présente invention, les n atomes de carbone (n étant un nombre pair positif) qui constituent un hétérofullerène sont substitués par n atomes de bore ou n atomes d'azote.
(JA) ヘテロフラーレンは、フラーレンを構成するn個(nは正の偶数)の炭素原子をn個のホウ素原子またはn個の窒素原子で置換している。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)