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1. (WO2019044303) LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
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Pub. No.: WO/2019/044303 International Application No.: PCT/JP2018/028149
Publication Date: 07.03.2019 International Filing Date: 26.07.2018
IPC:
H01L 21/268 (2006.01) ,G02B 3/00 (2006.01) ,H01L 21/20 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
268
using electromagnetic radiation, e.g. laser radiation
G PHYSICS
02
OPTICS
B
OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
3
Simple or compound lenses
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
Applicants:
株式会社ブイ・テクノロジー V TECHNOLOGY CO., LTD. [JP/JP]; 神奈川県横浜市保土ヶ谷区神戸町134番地 134, Godo-cho, Hodogaya-ku, Yokohama-shi, Kanagawa 2400005, JP
Inventors:
水村 通伸 MIZUMURA Michinobu; JP
Agent:
特許業務法人白坂 SHIRASAKA & PATENT PARTNERS; 東京都千代田区丸の内一丁目5番1号 新丸の内ビルディング10階EGG JAPAN EGG JAPAN 10F Shin-Marunouchi Building, 1-5-1 Marunouchi, Chiyoda-ku, Tokyo 1006510, JP
Priority Data:
2017-16690131.08.2017JP
Title (EN) LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
(FR) DISPOSITIF DE RECUIT LASER ET PROCÉDÉ DE RECUIT LASER
(JA) レーザアニール装置及びレーザアニール方法
Abstract:
(EN) The laser annealing device according to one embodiment of the present invention comprises a light source for generating laser light, a fly-eye lens for homogenizing the intensity of the laser light, a projection mask for masking the laser light that has passed through the fly-eye lens, and a projection lens for forming, from the laser light that has passed through the projection mask, a laser beam to be impinged in a predetermined range on a substrate. The laser annealing device is configured such that the array orientation of the fly-eye lens is rotated by a predetermined angle with respect to the array orientation of the mask pattern in the projection mask in order to suppress moiré patterns, which could be created when interference fringes generated from the laser light passing through the fly-eye lens pass through the projection mask.
(FR) Selon un mode de réalisation, cette invention concerne un dispositif de recuit laser, comprenant une source de lumière pour générer une lumière laser, une lentille à facettes multiples pour homogénéiser l'intensité de la lumière laser, un masque de projection pour masquer la lumière laser qui a traversé la lentille à facettes multiples, et une lentille de projection pour former, à partir de la lumière laser qui a traversé le masque de projection, un faisceau laser à appliquer sur une portée prédéterminée sur un substrat. Le dispositif de recuit laser est configuré de telle sorte que l'orientation de réseau de la lentille à facettes multiples est pivotée à un angle prédéterminé par rapport à l'orientation de réseau du motif de masque dans le masque de projection afin de supprimer les motifs de moiré, qui pourraient être créées lorsque des franges d'interférence générées par la lumière laser traversant la lentille à facettes multiples passent à travers le masque de projection.
(JA) 本発明の一態様に係るレーザアニール装置は、レーザ光を発生させる光源と、レーザ光の強度分布を均一にするためのフライアイレンズと、フライアイレンズを通過したレーザ光をマスキングする投影マスクと、投影マスクを通過したレーザ光から基板の所定の範囲に照射するレーザービームを形成する投影レンズと、を備え、レーザ光がフライアイレンズを通過することによって発生する干渉縞が投影マスクを通過することによって発生し得るモアレを抑制するために、フライアイレンズの配列方向を投影マスクのマスクパターンの配列方向に対して所定角度だけ回転させて構成されている。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)