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1. (WO2019044285) Al ALLOY THIN FILM, LIGHT EMITTING ELEMENT AND SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044285 International Application No.: PCT/JP2018/027750
Publication Date: 07.03.2019 International Filing Date: 24.07.2018
IPC:
C23C 14/14 (2006.01) ,C22C 21/00 (2006.01) ,C23C 14/34 (2006.01) ,H01L 21/28 (2006.01) ,H01L 21/285 (2006.01) ,H01L 33/40 (2010.01) ,H01L 51/50 (2006.01) ,H05B 33/02 (2006.01) ,H05B 33/24 (2006.01) ,H05B 33/26 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
14
Metallic material, boron or silicon
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
21
Alloys based on aluminium
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28
Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283
Deposition of conductive or insulating materials for electrodes
285
from a gas or vapour, e.g. condensation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
40
Materials therefor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
22
characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
24
of metallic reflective layers
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
12
Light sources with substantially two-dimensional radiating surfaces
26
characterised by the composition or arrangement of the conductive material used as an electrode
Applicants:
株式会社コベルコ科研 KOBELCO RESEARCH INSTITUTE, INC. [JP/JP]; 兵庫県神戸市中央区脇浜海岸通一丁目5番1号 1-5-1, Wakinohama-kaigan-dori, Chuo-ku, Kobe-shi, Hyogo 6510073, JP
Inventors:
▲吉▼田 慎太郎 YOSHIDA Shintaro; --
奥野 博行 OKUNO Hiroyuki; --
Agent:
天野 一規 AMANO Kazunori; JP
Priority Data:
2017-16330128.08.2017JP
Title (EN) Al ALLOY THIN FILM, LIGHT EMITTING ELEMENT AND SPUTTERING TARGET
(FR) FILM MINCE D'ALLIAGE D'ALUMINIUM, ÉLÉMENT ÉLECTROLUMINESCENT ET CIBLE DE PULVÉRISATION
(JA) Al合金薄膜、発光素子及びスパッタリングターゲット
Abstract:
(EN) An Al alloy thin film according to one embodiment of the present invention is directly or indirectly laminated on a substrate that has a refractive index of from 1.5 to 2.0 (inclusive) and has an average film thickness of from 50 nm to 2,000 nm (inclusive), while containing a rare earth element. This Al alloy thin film is configured such that: the maximum crystal grain size of intermetallic compounds of the rare earth element is 300 nm or less, said intermetallic compounds being present in a region that is within ± 20% of the thickness of the Al alloy thin film using the center in the thickness direction as a base line; the intermetallic compounds are present in a dispersed state, with the distance between adjacent intermetallic compounds being 2,000 nm or less; and the reflectance from the substrate side is 60% or more.
(FR) Film mince d'alliage d'aluminium qui est, selon un mode de réalisation de la présente invention, stratifié directement ou indirectement sur un substrat qui a un indice de réfraction de 1,5 à 2,0 (inclus) et une épaisseur moyenne de film de 50 nm à 2 000 nm (inclus), tout en contenant un élément de terre rare. Ce film mince d'alliage d'aluminium est configuré de telle sorte que : la taille de grain cristallin maximale de composés intermétalliques de l'élément de terre rare est inférieure ou égale à 300 nm, lesdits composés intermétalliques étant présents dans une région située dans ± 20 % de l'épaisseur du film mince d'alliage d'aluminium en utilisant le centre dans la direction de l'épaisseur en tant que ligne de base; les composés intermétalliques sont présents dans un état dispersé, la distance entre des composés intermétalliques adjacents étant de 2 000 nm ou moins; et la réflectance depuis le côté substrat étant supérieure ou égale à 60 %.
(JA) 本発明の一態様に係るAl合金薄膜は、屈折率が1.5以上2.0以下である基板に直接又は間接的に積層され、平均膜厚が50nm以上2000nm以下で希土類元素を含むAl合金薄膜であって、上記Al合金薄膜の厚み方向の中心を基準として厚みの±20%以内の領域に存在する上記希土類元素の金属間化合物の最大結晶粒径が300nm以下、かつ隣接する上記金属間化合物が2000nm以下の距離で分散状態で存在し、上記基板側からの反射率が60%以上である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)