Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019044231) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044231 International Application No.: PCT/JP2018/026910
Publication Date: 07.03.2019 International Filing Date: 18.07.2018
IPC:
G03F 7/039 (2006.01) ,C08F 20/22 (2006.01) ,G03F 7/038 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
039
Macromolecular compounds which are photodegradable, e.g. positive electron resists
C CHEMISTRY; METALLURGY
08
ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
F
MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
20
Homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02
Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10
Esters
22
Esters containing halogen
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
038
Macromolecular compounds which are rendered insoluble or differentially wettable
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
富士フイルム株式会社 FUJIFILM CORPORATION [JP/JP]; 東京都港区西麻布2丁目26番30号 26-30, Nishiazabu 2-chome, Minato-ku, Tokyo 1068620, JP
Inventors:
小川 倫弘 OGAWA Michihiro; JP
金子 明弘 KANEKO Akihiro; JP
川島 敬史 KAWASHIMA Takashi; JP
土村 智孝 TSUCHIMURA Tomotaka; JP
Agent:
中島 順子 NAKASHIMA Junko; JP
米倉 潤造 YONEKURA Junzo; JP
村上 泰規 MURAKAMI Yasunori; JP
Priority Data:
2017-16778031.08.2017JP
Title (EN) ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR PRODUCING ELECTRONIC DEVICE
(FR) COMPOSITION DE RÉSINE SENSIBLE À LA LUMIÈRE ACTIVE OU AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FORMATION DE MOTIF ET PROCÉDÉ DE PRODUCTION D'UN DISPOSITIF ÉLECTRONIQUE
(JA) 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
Abstract:
(EN) Provided is an active light sensitive or radiation sensitive resin composition which has high sensitivity and enables the formation of a pattern that has excellent LER and collapse prevention ability. Also provided are: a resist film which uses this active light sensitive or radiation sensitive resin composition; a pattern forming method; and a method for producing an electronic device. This active light sensitive or radiation sensitive resin composition contains: a compound which produces an acid when irradiated with active light or radiation; and a resin, the polarity of which is increased by the action of an acid. The resin contains a repeating unit represented by general formula (B-1) and at least one halogen atom that is selected from the group consisting of a fluorine atom and an iodine atom.
(FR) L'invention concerne une composition de résine qui est sensible à la lumière active ou au rayonnement, qui présente une sensibilité élevée et qui permet la formation d'un motif qui a un excellent LER ainsi qu'une excellente capacité de prévention de l'affaissement. L'invention concerne également : un film de réserve utilisant cette composition de résine sensible à la lumière active ou au rayonnement ; un procédé de formation de motif ; et un procédé de production d'un dispositif électronique. Cette composition de résine sensible à la lumière active ou au rayonnement contient : un composé qui produit un acide lorsqu'il est irradié par une lumière active ou par un rayonnement actif ; et une résine dont la polarité est augmentée par l'action d'un acide. La résine contient une unité récurrente représentée par la formule générale (B-1) et au moins un atome d'halogène qui est choisi parmi le groupe constitué d'un atome de fluor et d'un atome d'iode.
(JA) 高感度であり、且つ、形成されるパターンがLER及び倒れ抑制能に優れる感活性光線性又は感放射線性樹脂組成物を提供する。また、上記感活性光線性又は感放射線性樹脂組成物を用いたレジスト膜、パターン形成方法、及び電子デバイスの製造方法を提供する。感活性光線性又は感放射線性樹脂組成物は、活性光線又は放射線の照射により酸を発生する化合物と、酸の作用により極性が増大する樹脂と、を含む感活性光線性又は感放射線性樹脂組成物であって、上記樹脂が、下記一般式(B-1)で表される繰り返し単位と、フッ素原子及びヨウ素原子からなる群より選ばれる少なくとも1つのハロゲン原子と、を含む。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)