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1. (WO2019044209) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044209 International Application No.: PCT/JP2018/026529
Publication Date: 07.03.2019 International Filing Date: 13.07.2018
IPC:
H01L 21/329 (2006.01) ,H01L 21/02 (2006.01) ,H01L 21/822 (2006.01) ,H01L 27/04 (2006.01) ,H01L 27/06 (2006.01) ,H01L 27/146 (2006.01) ,H01L 29/861 (2006.01) ,H01L 29/868 (2006.01) ,H01L 29/87 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
329
the devices comprising one or two electrodes, e.g. diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
868
PIN diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
86
controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated, or switched
861
Diodes
87
Thyristor diodes, e.g. Shockley diodes, break-over diodes
Applicants:
ソニーセミコンダクタソリューションズ株式会社 SONY SEMICONDUCTOR SOLUTIONS CORPORATION [JP/JP]; 神奈川県厚木市旭町四丁目14番1号 4-14-1, Asahi-cho, Atsugi-shi, Kanagawa 2430014, JP
Inventors:
岡野 仁志 OKANO, Hitoshi; JP
Agent:
亀谷 美明 KAMEYA, Yoshiaki; JP
金本 哲男 KANEMOTO, Tetsuo; JP
萩原 康司 HAGIWARA, Yasushi; JP
Priority Data:
2017-16561930.08.2017JP
Title (EN) SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF ÉLECTRONIQUE
(JA) 半導体装置及び電子機器
Abstract:
(EN) [Problem] To provide a semiconductor device which is capable of withstanding a higher voltage with more efficient area occupation. [Solution] A semiconductor device which is provided with: a first conductivity type layer into which an impurity of a first conductivity type is introduced; a second conductivity type layer into which an impurity of a second conductivity type is introduced, said impurity of a second conductivity type having a polarity that is different from the polarity of the impurity of a first conductivity type; and an intermediate layer which is sandwiched between the first conductivity type layer and the second conductivity type layer, and which does not contain the impurity of a first conductivity type or the impurity of a second conductivity type, or alternatively has a concentration of the impurity of a first conductivity type or the impurity of a second conductivity type lower than the concentration of the impurity of the first conductivity type layer or the second conductivity type layer. This semiconductor device is configured such that the first conductivity type layer, the intermediate layer and the second conductivity type layer are laminated within a semiconductor substrate in the thickness direction of the semiconductor substrate.
(FR) Le problème décrit par la présente invention est de fournir un dispositif à semi-conducteur qui est capable de supporter une tension plus élevée avec une occupation de zone plus efficace. La solution selon l'invention concerne un dispositif à semi-conducteur qui comprend : une couche de premier type de conductivité dans laquelle une impureté d'un premier type de conductivité est introduite; une couche de second type de conductivité dans laquelle une impureté d'un second type de conductivité est introduite, ladite impureté d'un second type de conductivité ayant une polarité qui est différente de la polarité de l'impureté d'un premier type de conductivité; et une couche intermédiaire qui est prise en sandwich entre la couche de premier type de conductivité et la couche de second type de conductivité, et qui ne contient pas l'impureté d'un premier type de conductivité ou l'impureté d'un second type de conductivité, ou en variante présente une concentration de l'impureté d'un premier type de conductivité ou de l'impureté d'un second type de conductivité inférieure à la concentration de l'impureté de la couche de premier type de conductivité ou de la couche de second type de conductivité. Ce dispositif à semi-conducteur est configuré de telle sorte que la couche de premier type de conductivité, la couche intermédiaire et la couche de second type de conductivité sont stratifiées à l'intérieur d'un substrat semi-conducteur dans la direction de l'épaisseur du substrat semi-conducteur.
(JA) 【課題】より効率的な占有面積で、より高電圧に耐えられる半導体装置を提供する。 【解決手段】第1導電型不純物が導入された第1導電型層と、前記第1導電型不純物と極性が異なる第2導電型不純物が導入された第2導電型層と、前記第1導電型層及び前記第2導電型層に挟持され、前記第1導電型不純物又は前記第2導電型不純物を含まない、又は前記第1導電型不純物又は前記第2導電型不純物の濃度が前記第1導電型層及び第2導電型層よりも低い中間層と、を備え、前記第1導電型層、前記中間層及び前記第2導電型層は、半導体基板の内部に前記半導体基板の厚み方向に積層されて設けられる、半導体装置。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)