Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019044142) METHOD FOR MANUFACTURING SUBSTRATE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044142 International Application No.: PCT/JP2018/024353
Publication Date: 07.03.2019 International Filing Date: 27.06.2018
IPC:
C30B 29/38 (2006.01) ,B23K 26/53 (2014.01) ,B28D 5/04 (2006.01) ,C30B 33/02 (2006.01) ,H01L 21/304 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
38
Nitrides
[IPC code unknown for B23K 26/53]
B PERFORMING OPERATIONS; TRANSPORTING
28
WORKING CEMENT, CLAY, OR STONE
D
WORKING STONE OR STONE-LIKE MATERIALS
5
Fine working of gems, jewels, crystals, e.g. of semiconductor material; Apparatus therefor
04
by tools other than of rotary type, e.g. reciprocating tools
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02
Heat treatment
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
国立大学法人名古屋大学 NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY [JP/JP]; 愛知県名古屋市千種区不老町1番 1, Furo-cho, Chikusa-ku, Nagoya-shi, Aichi 4648601, JP
浜松ホトニクス株式会社 HAMAMATSU PHOTONICS K.K. [JP/JP]; 静岡県浜松市東区市野町1126番地の1 1126-1, Ichino-cho, Higashi-ku, Hamamatsu-shi, Shizuoka 4358558, JP
Inventors:
田中 敦之 TANAKA Atsushi; JP
河口 大祐 KAWAGUCHI Daisuke; JP
Agent:
特許業務法人 快友国際特許事務所 KAI-U PATENT LAW FIRM; 愛知県名古屋市西区牛島町6番1号 名古屋ルーセントタワー9階 NAGOYA LUCENT TOWER 9F, 6-1, Ushijima-cho, Nishi-ku, Nagoya-shi, Aichi 4516009, JP
Priority Data:
2017-16856901.09.2017JP
Title (EN) METHOD FOR MANUFACTURING SUBSTRATE
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT
(JA) 基板製造方法
Abstract:
(EN) Provided is a technique relating to a method for manufacturing a substrate. This method for manufacturing a substrate includes an irradiation step of irradiating the inside of a gallium nitride (GaN) ingot with laser light from a direction substantially perpendicular to the surface of the ingot to form a modified layer which has gallium deposited thereon and is substantially parallel to the ingot surface. The method for manufacturing a substrate includes a separation step of separating the ingots from each other along the boundary consisting of the position at which the modified layer was formed by dissolving the modified layer.
(FR) L'invention concerne une technique se rapportant à un procédé de fabrication d'un substrat. Ledit procédé de fabrication d'un substrat comprend une étape d'exposition à un rayonnement consistant à exposer l'intérieur d'un lingot de nitrure de gallium (GaN) à une lumière laser depuis une direction sensiblement perpendiculaire à la surface du lingot pour former une couche modifiée sur laquelle est déposé du gallium et qui est sensiblement parallèle à la surface du lingot. Le procédé de fabrication d'un substrat comprend une étape de séparation consistant à séparer les lingots les uns des autres, le long de la limite constituée par la position au niveau de laquelle la couche modifiée a été formée, par dissolution de la couche modifiée.
(JA) 基板製造方法に関する技術を提供する。基板製造方法は、窒化ガリウム(GaN)のインゴットの表面に略垂直な方向からインゴットの内部にレーザ光を照射し、ガリウムが析出した改質層であってインゴット表面に略平行な改質層を形成する照射工程を備える。基板製造方法は、改質層を溶解することで、改質層が形成されていた位置を境界として、インゴットを互いに分離する分離工程を備える。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)