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1. (WO2019044129) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
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Pub. No.: WO/2019/044129 International Application No.: PCT/JP2018/023470
Publication Date: 07.03.2019 International Filing Date: 20.06.2018
IPC:
H01L 21/304 (2006.01) ,B08B 3/10 (2006.01) ,B08B 5/00 (2006.01) ,B08B 7/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3
Cleaning by methods involving the use or presence of liquid or steam
04
Cleaning involving contact with liquid
10
with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5
Cleaning by methods involving the use of air flow or gas flow
B PERFORMING OPERATIONS; TRANSPORTING
08
CLEANING
B
CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
7
Cleaning by methods not provided for in a single other subclass or a single group in this subclass
Applicants:
株式会社SCREENホールディングス SCREEN HOLDINGS CO., LTD. [JP/JP]; 京都府京都市上京区堀川通寺之内上る四丁目天神北町1番地の1 Tenjinkita-machi 1-1, Teranouchi-agaru 4-chome, Horikawa-dori, Kamigyo-ku, Kyoto-shi, Kyoto 6028585, JP
Inventors:
上田 大 UEDA Dai; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
有田 貴弘 ARITA Takahiro; JP
Priority Data:
2017-16919504.09.2017JP
Title (EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) When a cooling nozzle is in an operating state of discharging cooling gas to a substrate, by a first shutter opening a discharge port, and a second shutter blocking a leak opening, the cooling gas sent to the cooling nozzle is discharged from the discharge port. On the other hand, when the cooling nozzle is in a standby state, by the first shutter blocking the discharge port, and the second shutter opening the leak opening, the cooling gas sent to the cooling nozzle is emitted from the leak opening. When in the standby state, the cooling gas is emitted only from the leak opening that is different from the discharge port, so it is possible to prevent adhesion of frost to the discharge port of the cooling nozzle.
(FR) Lorsqu’une buse de refroidissement est en mode de fonctionnement pour éjecter un gaz de refroidissement vers un substrat, l’ouverture d’un orifice d’éjection par un premier obturateur et le blocage d’une ouverture de fuite par un deuxième obturateur permettent l’éjection du gaz de refroidissement envoyé à la buse de refroidissement par l’orifice d’éjection. En revanche, lorsque la buse de refroidissement est en mode de veille, le blocage de l’orifice d’éjection par le premier obturateur et l’ouverture de l’ouverture de fuite par le deuxième obturateur permettent l’éjection du gaz de refroidissement envoyé à la buse de refroidissement par l’ouverture de fuite. En mode de veille, le gaz de refroidissement est émis uniquement par l’ouverture de fuite, distincte de l’orifice d’éjection, ce qui permet d’éviter l’adhérence de givre à l’orifice d’éjection de la buse de refroidissement.
(JA) 冷却ノズルが基板に冷却ガスを吐出する動作状態のときには、第1シャッターが吐出口を開放するとともに、第2シャッターがリーク開口を閉塞することにより、冷却ノズルに送給された冷却ガスは吐出口から吐出される。一方、冷却ノズルが待機状態のときには、第1シャッターが吐出口を閉塞するとともに、第2シャッターがリーク開口を開放することにより、冷却ノズルに送給された冷却ガスはリーク開口から放出される。待機状態のときには、吐出口とは異なるリーク開口のみから冷却ガスを放出しているため、冷却ノズルの吐出口への霜の付着を防止することができる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)