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1. (WO2019044029) SILICON CARBIDE EPITAXIAL SUBSTRATE AND PRODUCTION METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/044029 International Application No.: PCT/JP2018/016565
Publication Date: 07.03.2019 International Filing Date: 24.04.2018
IPC:
C30B 29/36 (2006.01) ,C23C 16/42 (2006.01) ,C30B 25/02 (2006.01) ,H01L 21/20 (2006.01) ,H01L 21/205 (2006.01) ,H01L 21/336 (2006.01) ,H01L 29/12 (2006.01) ,H01L 29/78 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
36
Carbides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22
characterised by the deposition of inorganic material, other than metallic material
30
Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
42
Silicides
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
Applicants:
住友電気工業株式会社 SUMITOMO ELECTRIC INDUSTRIES, LTD. [JP/JP]; 大阪府大阪市中央区北浜四丁目5番33号 5-33, Kitahama 4-chome, Chuo-ku, Osaka-shi, Osaka 5410041, JP
Inventors:
伊東 洋典 ITOH, Hironori; JP
堀 勉 HORI, Tsutomu; JP
Agent:
特許業務法人深見特許事務所 FUKAMI PATENT OFFICE, P.C.; 大阪府大阪市北区中之島三丁目2番4号 中之島フェスティバルタワー・ウエスト Nakanoshima Festival Tower West, 2-4, Nakanoshima 3-chome, Kita-ku, Osaka-shi, Osaka 5300005, JP
Priority Data:
2017-16825201.09.2017JP
Title (EN) SILICON CARBIDE EPITAXIAL SUBSTRATE AND PRODUCTION METHOD FOR SILICON CARBIDE SEMICONDUCTOR DEVICE
(FR) SUBSTRAT D'ÉPITAXIE AU CARBURE DE SILICIUM ET PROCÉDÉ DE PRODUCTION DE DISPOSITIF À SEMI-CONDUCTEUR AU CARBURE DE SILICIUM
(JA) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
Abstract:
(EN) This silicon carbide epitaxial substrate has a silicon carbide substrate (10) and a silicon carbide epitaxial film (20). The silicon carbide epitaxial film includes a first layer (21) and a second layer (22). The concentration of n-type impurities contained in the first layer is lower than the concentration of n-type impurities contained in the silicon carbide substrate, and is higher than the concentration of n-type impurities contained in the second layer. The silicon carbide substrate has a main surface (12) which has a basal plane dislocation having a first surface density. The silicon carbide epitaxial film has a main surface (14) having a basal plane dislocation having a second surface density lower than the first surface density. The value obtained by dividing the second surface density by the first surface density is 1/1000 or less. The main surface of the silicon carbide epitaxial film is sloped with respect to the (000-1) plane or the (000-1) plane at an off-angle of 8° or less.
(FR) Cette invention concerne un substrat d'épitaxie au carbure de silicium, comprenant un substrat au carbure de silicium (10) et un film d'épitaxie au carbure de silicium (20). Le film d'épitaxie de carbure de silicium comprend une première couche (21) et une seconde couche (22). La concentration en impuretés de type n contenue dans la première couche est inférieure à la concentration en impuretés de type n contenue dans le substrat au carbure de silicium, et supérieure à la concentration en impuretés de type n contenue dans la seconde couche. Le substrat au carbure de silicium a une surface principale (12) qui a une dislocation dans le plan basal ayant une première densité de surface. Le film d'épitaxie au carbure de silicium a une surface principale (14) ayant une dislocation dans le plan basal ayant une seconde densité de surface inférieure à la première densité de surface. La valeur obtenue en divisant la seconde densité de surface par la première densité de surface est inférieure ou égale à 1/1000. La surface principale du film d'épitaxie au carbure de silicium est inclinée par rapport au plan (000-1) ou au plan (000-1) à un angle de décalage inférieur ou égal à 8°.
(JA) 炭化珪素エピタキシャル基板は、炭化珪素基板(10)と、炭化珪素エピタキシャル膜(20)とを有している。炭化珪素エピタキシャル膜は、第1層(21)と、第2層(22)とを含んでいる。第1層が含むn型不純物の濃度は、炭化珪素基板が含むn型不純物の濃度より低く、かつ第2層が含むn型不純物の濃度より高い。炭化珪素基板の主表面(12)には、第1面密度を有する基底面転位がある。炭化珪素エピタキシャル膜の主表面(14)には、第1面密度よりも低い第2面密度を有する基底面転位がある。第2面密度を、第1面密度で除した値は、1/1000以下である。炭化珪素エピタキシャル膜の主表面は、(000-1)面または(000-1)面に対して8°以下のオフ角で傾斜した面である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)