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1. (WO2019043945) CHARGED PARTICLE BEAM DEVICE
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Pub. No.: WO/2019/043945 International Application No.: PCT/JP2017/031788
Publication Date: 07.03.2019 International Filing Date: 04.09.2017
IPC:
H01J 37/141 (2006.01) ,H01J 37/317 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02
Details
04
Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
10
Lenses
14
magnetic
141
Electromagnetic lenses
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30
Electron-beam or ion-beam tubes for localised treatment of objects
317
for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
Applicants:
株式会社日立ハイテクノロジーズ HITACHI HIGH-TECHNOLOGIES CORPORATION [JP/JP]; 東京都港区西新橋一丁目24番14号 24-14, Nishi Shimbashi 1-chome, Minato-ku, Tokyo 1058717, JP
Inventors:
平野 遼 HIRANO Ryo; JP
野間口 恒典 NOMAGUCHI Tsunenori; JP
神谷 知里 KAMIYA Chisato; JP
片根 純一 KATANE Junichi; JP
Agent:
特許業務法人平木国際特許事務所 HIRAKI & ASSOCIATES; 東京都港区愛宕二丁目5-1 愛宕グリーンヒルズMORIタワー32階 Atago Green Hills MORI Tower 32F, 5-1, Atago 2-chome, Minato-ku, Tokyo 1056232, JP
Priority Data:
Title (EN) CHARGED PARTICLE BEAM DEVICE
(FR) DISPOSITIF À FAISCEAU DE PARTICULES CHARGÉES
(JA) 荷電粒子線装置
Abstract:
(EN) The present invention achieves, with a simple configuration, a complex charged particle beam device that can reduce leakage magnet-field from a magnetic pole piece constituting an objective lens of a SEM. This charged particle beam device: acquires an ion-beam observation image while causing current to flow in a first coil constituting the objective lens; executes, for a plurality of current values, operations for reducing image displacement of the ion-beam image by causing current to flow in a second coil; and determines the current to be caused to flow in the second coil based on differences between the operations.
(FR) La présente invention permet d'obtenir, au moyen d'une configuration simple, un dispositif à faisceau de particules chargées complexe pouvant réduire le champ magnétique de fuite d'une pièce polaire magnétique constituant un objectif d'un MEB. Ce dispositif à faisceau de particules chargées : acquiert une image d'observation de faisceau d'ions tout en amenant un courant à circuler dans une première bobine constituant l'objectif ; exécute, pour une pluralité de valeurs de courant, des opérations de réduction de déplacement d'image de l'image de faisceau d'ions en amenant un courant à circuler dans une seconde bobine ; et détermine le courant devant être amené à circuler dans la seconde bobine en fonction de différences entre les opérations.
(JA) 本発明は、SEMの対物レンズを形成する磁極片からの漏れ磁場を抑制することができる複合荷電粒子線装置を、簡易な構造により実現するものである。本発明に係る荷電粒子線装置は、対物レンズを構成する第1コイルに電流を流しながらイオンビーム観察像を取得し、第2コイルに電流を流すことによりその像ずれを減少させる動作を、複数の電流値で実施し、前記動作間の差分に基づき前記第2コイルに流す電流を決定する(図6参照)。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)