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1. (WO2019043919) SUBSTRATE TREATMENT DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
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Pub. No.: WO/2019/043919 International Application No.: PCT/JP2017/031630
Publication Date: 07.03.2019 International Filing Date: 01.09.2017
IPC:
H01L 21/677 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677
for conveying, e.g. between different work stations
Applicants:
株式会社KOKUSAI ELECTRIC KOKUSAI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区神田鍛冶町三丁目4番地 3-4, Kandakaji-cho, Chiyoda-ku, TOKYO 1010045, JP
Inventors:
廣地 志有 HIROCHI, Yukitomo; JP
野上 孝志 NOGAMI, Takashi; JP
柳沢 愛彦 YANAGISAWA, Yoshihiko; JP
Priority Data:
Title (EN) SUBSTRATE TREATMENT DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROGRAM
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT, PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR, ET PROGRAMME
(JA) 基板処理装置、半導体装置の製造方法およびプログラム
Abstract:
(EN) Provided is an electromagnetic wave treatment technology that makes it possible to suppress decreases in productivity even if a substrate cooling step is included. The technology includes: at least two treatment chambers, into which a substrate is conveyed from a conveyance chamber for conveying the substrate, and in which a prescribed treatment is performed on the substrate; a first gas supply unit that is spatially linked to the conveyance chamber, is equidistant from the at-least-two treatment chambers, is disposed on a side wall of the conveyance chamber, and supplies a purge gas for purging the atmosphere of the interior at a first gas flow rate; and a cooling chamber provided with an exhaust unit that includes exhaust piping for discharging the purge gas.
(FR) L'invention concerne une technologie de traitement par ondes électromagnétiques qui permet de supprimer des diminutions de productivité même si une étape de refroidissement de substrat est incluse. La technologie comprend : au moins deux chambres de traitement, jusqu'auxquelles un substrat est transporté à partir d'une chambre de transport destinée à transporter le substrat, et dans lesquelles un traitement prescrit est effectué sur le substrat ; une première unité d'alimentation en gaz qui est reliée spatialement à la chambre de transport, est équidistante desdites au moins deux chambres de traitement, est disposée sur une paroi latérale de la chambre de transport, et fournit un gaz de purge destiné à purger l'atmosphère de l'intérieur à un premier débit de gaz ; et une chambre de refroidissement pourvue d'une unité d'échappement qui comporte une tuyauterie d'échappement pour évacuer le gaz de purge.
(JA) 基板の冷却工程を設けた場合であっても生産性の低下を抑制することが可能となる電磁波処理技術を提供する。基板を搬送する搬送室から前記基板が搬送されて所定の処理を行う少なくとも2つの処理室と、前記搬送室と空間的に連結され、前記少なくとも2つの処理室から等距離であって前記搬送室の側壁に配置され、内部の雰囲気をパージするパージガスを第1のガス流量にて供給する第1のガス供給部と、前記パージガスを排気する排気配管を有する排気部とを備えた冷却室と、を有する技術が提供される。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)