Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019043870) SPRING ELECTRODE FOR PRESS-PACK POWER SEMICONDUCTOR MODULE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/043870 International Application No.: PCT/JP2017/031365
Publication Date: 07.03.2019 International Filing Date: 31.08.2017
IPC:
H01L 23/48 (2006.01) ,H01L 21/52 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H01R 11/01 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52
Mounting semiconductor bodies in containers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
R
ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
11
Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
01
characterised by the form or arrangement of the conductive interconnection between their connecting locations
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
藤田 重人 FUJITA Shigeto; JP
松田 哲也 MATSUDA Tetsuya; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
有田 貴弘 ARITA Takahiro; JP
Priority Data:
Title (EN) SPRING ELECTRODE FOR PRESS-PACK POWER SEMICONDUCTOR MODULE
(FR) ÉLECTRODE À RESSORT POUR MODULE SEMI-CONDUCTEUR DE PUISSANCE DE BLOC-PRESSE
(JA) プレスパックパワー半導体モジュール用ばね電極
Abstract:
(EN) The purpose of the present invention is to provide a spring electrode that prevents disconnection of a power conduction path during short-circuiting of a semiconductor chip in a press-pack power semiconductor module. This spring electrode (101) for a press-pack power semiconductor module comprises: a first electrode (11) that contacts a power semiconductor chip; a second electrode (12) that is disposed facing the first electrode; and a pressure pad connecting the first electrode (11) and the second electrode (12), the pressure pad being flexible in the direction of a normal to the facing surfaces of the first electrode (11) and the second electrode (12). The facing surfaces of the first electrode (11) and the second electrode (12) have pentagonal or greater polygonal shapes. The edges of the facing surface of the first electrode (11) and the edges of the facing surface of the second electrode (12) that correspond to these edges are connected in parallel by the pressure pad (13).
(FR) L'objectif de la présente invention est de fournir une électrode à ressort qui empêche la déconnexion d'un trajet de conduction de puissance pendant un court-circuit d'une puce semi-conductrice dans un module semi-conducteur de puissance de bloc-presse. Cette électrode à ressort (101) pour un module semi-conducteur de puissance de bloc-presse comprend : une première électrode (11) qui entre en contact avec une puce semi-conductrice de puissance ; une seconde électrode (12) qui est disposée en regard de la première électrode ; et un tampon de pression connectant la première électrode (11) et la seconde électrode (12), le tampon de pression étant flexible dans la direction d'une normale aux surfaces opposées de la première électrode (11) et de la seconde électrode (12). Les surfaces opposées de la première électrode (11) et de la seconde électrode (12) ont des formes polygonales au moins pentagonales. Les bords de la surface opposée de la première électrode (11) et les bords de la surface opposée de la seconde électrode (12) qui correspondent à ces bords sont connectés en parallèle par le tampon de pression (13).
(JA) 本発明は、プレスパックパワー半導体モジュールにおいて、半導体チップの短絡時に導電路の断線を防ぐばね電極の提供を目的とする。本発明のプレスパックパワー半導体モジュール用ばね電極(101)は、パワー半導体チップと接触する第1電極(11)と、第1電極に対向して配置される第2電極(12)と、第1電極(11)および第2電極(12)を接続し、第1電極(11)および第2電極(12)の対向面の法線方向に可撓性を有するプレッシャパッドとを備え、第1電極(11)および第2電極(12)の対向面は5角形以上の多角形であり、第1電極(11)の対向面の各辺とこれらの辺に対応する第2電極(12)の対向面の各辺とは、プレッシャパッド(13)により並列接続される。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)