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1. (WO2019043865) SUSCEPTOR, EPITAXIAL GROWTH DEVICE, EPITAXIAL SILICON WAFER MANUFACTURING METHOD, AND EPITAXIAL SILICON WAFER
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Pub. No.: WO/2019/043865 International Application No.: PCT/JP2017/031343
Publication Date: 07.03.2019 International Filing Date: 31.08.2017
IPC:
H01L 21/205 (2006.01) ,C23C 16/458 (2006.01) ,C30B 25/12 (2006.01) ,H01L 21/683 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205
using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
458
characterised by the method used for supporting substrates in the reaction chamber
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
12
Substrate holders or susceptors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67
Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683
for supporting or gripping
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 2-1, Shibaura 1-chome, Minato-ku Tokyo 1058634, JP
Inventors:
楢原 和宏 NARAHARA Kazuhiro; JP
Agent:
杉村 憲司 SUGIMURA Kenji; JP
Priority Data:
Title (EN) SUSCEPTOR, EPITAXIAL GROWTH DEVICE, EPITAXIAL SILICON WAFER MANUFACTURING METHOD, AND EPITAXIAL SILICON WAFER
(FR) SUSCEPTEUR, DISPOSITIF DE CROISSANCE ÉPITAXIALE, PROCÉDÉ DE FABRICATION DE TRANCHE DE SILICIUM ÉPITAXIALE, ET TRANCHE DE SILICIUM ÉPITAXIALE
(JA) サセプタ、エピタキシャル成長装置、エピタキシャルシリコンウェーハの製造方法、ならびにエピタキシャルシリコンウェーハ
Abstract:
(EN) Provided is a susceptor with which it is possible to increase the circumferential uniformity of the flatness of an epitaxial layer of an epitaxial silicon wafer. A susceptor 100 according to the present invention has a recessed counterbore portion for placing a silicon wafer W, wherein a radial distance L between the center of the susceptor and an opening edge of the counterbore portion varies in the circumferential direction with a period of 90. If the angle of the position at which the radial distance L is a minimum is defined as 0°, the radial distance L has a minimum value L1 at 90°, 180°, and 270°, and the radial distance L has a maximum value L2 at 45°, 135°, 225°, and 315°. The susceptor 100, as viewed from above, has an opening edge 110C defining four elliptic arcs protruding radially outward.
(FR) L'invention concerne un suscepteur avec lequel il est possible d'augmenter l'uniformité circonférentielle de la planéité d'une couche épitaxiale d'une tranche de silicium épitaxiale. Un suscepteur 100 selon la présente invention comprend une partie de lamage en creux pour placer une tranche de silicium W, une distance radiale L entre le centre du suscepteur et un bord d'ouverture de la partie de lamage variant dans la direction circonférentielle selon une période de 90. Si l'angle de la position à laquelle la distance radiale L est un minimum est défini comme 0°, la distance radiale L a une valeur minimale L1 à 90°, 180°, et 270°, et la distance radiale L a une valeur maximale L2 à 45°, 135°, 225° et 315°. Le suscepteur 100, vu de dessus, possède un bord d'ouverture 110C définissant quatre arcs elliptiques faisant saillie radialement vers l'extérieur.
(JA) エピタキシャルシリコンウェーハのエピタキシャル層の平坦度の周方向均一性を高めることのできるサセプタを提供する。 本発明によるサセプタ100は、シリコンウェーハWが載置される凹形状の座ぐり部が設けられ、サセプタの中心と座ぐり部の開口縁との間の径方向距離Lが90度周期で周方向に変動するとともに、径方向距離Lが最小となる位置の角度を0度としたときに、90度、180度、270度のそれぞれで径方向距離Lが最小値Lとなると共に、45度、135度、225度、315度のそれぞれで径方向距離Lが最大値Lとなり、サセプタ100を上面視したときの開口縁110Cが、径方向外側を凸とする4つの楕円弧を描く。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)