Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2019043753) SPRING ELECTRODE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/043753 International Application No.: PCT/JP2017/030715
Publication Date: 07.03.2019 International Filing Date: 28.08.2017
IPC:
H01L 23/48 (2006.01) ,H01L 21/52 (2006.01) ,H01L 25/07 (2006.01) ,H01L 25/18 (2006.01) ,H01R 11/01 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
52
Mounting semiconductor bodies in containers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
R
ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
11
Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
01
characterised by the form or arrangement of the conductive interconnection between their connecting locations
Applicants:
三菱電機株式会社 MITSUBISHI ELECTRIC CORPORATION [JP/JP]; 東京都千代田区丸の内二丁目7番3号 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1008310, JP
Inventors:
藤田 重人 FUJITA Shigeto; JP
矢次 慶和 YAJI Yoshikazu; JP
Agent:
吉竹 英俊 YOSHITAKE Hidetoshi; JP
有田 貴弘 ARITA Takahiro; JP
Priority Data:
Title (EN) SPRING ELECTRODE
(FR) ÉLECTRODE RESSORT
(JA) ばね電極
Abstract:
(EN) The purpose of the present invention is to provide a feature with which it is possible to inhibit a spring electrode from melting and disconnecting when a semiconductor chip short-circuits. A spring electrode 1, provided with a main body part 2. The main body part 2 comprises a cylindrical conductor. The diameter of the main body part 2 varies along the longitudinal direction so that the side surface thereof is bellows-shaped. Because no edge portion is present on the main body part 2 of the spring electrode 1, it becomes possible to reduce localized concentration of a short-circuit current flowing through the spring electrode 1 when the semiconductor chip 10 short-circuits. It is thereby possible to inhibit the spring electrode 1 from melting and disconnecting.
(FR) L'objectif de la présente invention est de fournir une caractéristique avec laquelle il est possible d'empêcher la fusion et la déconnexion d'une électrode ressort lorsqu'une puce à semi-conducteur subit un court-circuit. Une électrode ressort (1) est pourvue d'une partie corps principal (2). La partie corps principal (2) comprend un conducteur cylindrique. Le diamètre de la partie corps principal (2) varie le long de la direction longitudinale de sorte que sa surface latérale soit en forme de soufflet. Comme aucune partie bord n'est présente sur la partie corps principal (2) de l'électrode ressort (1), il devient possible de réduire la concentration localisée d'un courant de court-circuit circulant à travers l'électrode ressort (1) lorsque la puce à semi-conducteur (10) subit un court-circuit. Il est ainsi possible d'empêcher la fusion et la déconnexion de l'électrode ressort (1).
(JA) 半導体チップの短絡時にばね電極が溶解して断線することを抑制可能な技術を提供することを目的とする。ばね電極1は、本体部2を備えている。本体部2は、筒状の導体により構成され、かつ、側面が蛇腹状になるように径が長手方向に沿って変化する。ばね電極1の本体部2においてエッジ部分が存在しないため、半導体チップ10の短絡時にばね電極1に流れる短絡電流の局所的集中を低減することができる。これにより、ばね電極1が溶解して断線することを抑制できる。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)