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1. (WO2019043511) SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/043511 International Application No.: PCT/IB2018/056334
Publication Date: 07.03.2019 International Filing Date: 22.08.2018
IPC:
H01L 29/786 (2006.01) ,G02F 1/1368 (2006.01) ,G09F 9/30 (2006.01) ,H01L 21/336 (2006.01) ,H01L 27/32 (2006.01) ,H01L 51/50 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136
Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362
Active matrix addressed cells
1368
in which the switching element is a three-electrode device
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
F
DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
9
Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
30
in which the desired character or characters are formed by combining individual elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
Applicants:
株式会社半導体エネルギー研究所 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. [JP/JP]; 神奈川県厚木市長谷398 398, Hase, Atsugi-shi, Kanagawa 2430036, JP
Inventors:
神長正美 JINTYOU, Masami; --
黒崎大輔 KUROSAKI, Daisuke; --
大野正勝 OHNO, Masakatsu; --
肥塚純一 KOEZUKA, Junichi; JP
Priority Data:
2017-16813701.09.2017JP
Title (EN) SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR ET DISPOSITIF D'AFFICHAGE
(JA) 半導体装置、及び表示装置
Abstract:
(EN) Provided is a highly reliable semiconductor device. A semiconductor device in which a second insulating layer is located above a first insulating layer, a semiconductor layer is located between the first insulating layer and the second insulating layer, a third insulating layer is located above the second insulating layer, a fourth insulating layer is located above the third insulating layer, a first conductive layer is located between the third insulating layer and the fourth insulating layer and includes a region that overlaps the semiconductor layer, the third insulating layer includes a region that contacts a lower surface of the first conductive layer and a region that contacts the fourth insulating layer, the fourth insulating layer contacts an upper surface and a side surface of the first conductive layer, a fifth insulating layer contacts an upper surface and a side surface of the semiconductor layer and has a first opening and a second opening in a region that overlaps the semiconductor layer but does not overlap the first conductive layer, a second conductive layer and a third conductive layer are electrically connected to the semiconductor layer at the first opening and the second opening, respectively, the third and fifth insulating layers include a metal as well as oxygen or nitrogen, and a sixth insulating layer has a region that contacts an upper surface and a side surface of the fifth insulating layer and a region that contacts the first insulating layer.
(FR) L'invention concerne un dispositif à semi-conducteur hautement fiable. Un dispositif à semi-conducteur dans lequel une seconde couche isolante est située au-dessus d'une première couche isolante, une couche semi-conductrice est située entre la première couche isolante et la seconde couche isolante, une troisième couche isolante est située au-dessus de la seconde couche isolante, une quatrième couche isolante est située au-dessus de la troisième couche isolante, une première couche conductrice est située entre la troisième couche isolante et la quatrième couche isolante et comprend une région qui chevauche la couche semi-conductrice, la troisième couche isolante comprend une région qui entre en contact avec une surface inférieure de la première couche conductrice et une région qui est en contact avec la quatrième couche isolante, la quatrième couche isolante entre en contact avec une surface supérieure et une surface latérale de la première couche conductrice, une cinquième couche isolante entre en contact avec une surface supérieure et une surface latérale de la couche semi-conductrice et a une première ouverture et une seconde ouverture dans une région qui chevauche la couche semi-conductrice mais ne chevauche pas la première couche conductrice, une seconde couche conductrice et une troisième couche conductrice sont électroconnectées à la couche semi-conductrice au niveau de la première ouverture et de la seconde ouverture, respectivement, les troisième et cinquième couches isolantes comprennent un métal ainsi que de l'oxygène ou de l'azote, et une sixième couche isolante a une région qui entre en contact avec une surface supérieure et une surface latérale de la cinquième couche isolante et une région qui est en contact avec la première couche isolante.
(JA) 要約書 信頼性の高い半導体装置を提供する。 第2の絶縁層は第1の絶縁層上に位置し、半導体層は第1の絶縁層と第2の絶縁層との間に位置し、 第3の絶縁層は第2の絶縁層上に位置し、 第4の絶縁層は第3の絶縁層上に位置し、 第1の導電層は 半導体層と重なる領域を有し、 かつ第3の絶縁層と第4の絶縁層との間に位置し、 第3の絶縁層は第 1の導電層の下面に接する領域と、 第4の絶縁層と接する領域とを有し、 第4の絶縁層は第1の導電 層の上面及び側面に接し、 第5の絶縁層は半導体層の上面及び側面に接し、 第5の絶縁層は半導体層 と重なり、 かつ第1の導電層と重ならない領域に第1の開口及び第2の開口を有し、 第2の導電層及 び第3の導電層はそれぞれ第1の開口及び第2の開口において半導体層と電気的に接続され、第3乃 至第5の絶縁層は金属と、 酸素又は窒素とを有し、 第6の絶縁層は第5の絶縁層の上面及び側面に接 する領域と、第1の絶縁層と接する領域とを有する半導体装置とする。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)