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1. (WO2019043448) CHEMISTRIES FOR ETCHING MULTI-STACKED LAYERS
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Pub. No.: WO/2019/043448 International Application No.: PCT/IB2018/000954
Publication Date: 07.03.2019 International Filing Date: 28.08.2018
IPC:
H01L 21/3065 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
3065
Plasma etching; Reactive-ion etching
Applicants:
SHEN, Peng [CN/JP]; JP (US)
URABE, Keiichiro [JP/JP]; JP (US)
YOKOTA, Jiro [JP/JP]; JP (US)
GOSSET, Nicolas [FR/JP]; JP (US)
L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE [FR/FR]; 75, Quai d'Orsay 75007 Paris, FR
Inventors:
SHEN, Peng; JP
URABE, Keiichiro; JP
YOKOTA, Jiro; JP
GOSSET, Nicolas; JP
Agent:
DE BEAUFORT, François-Xavier; 75 Quai d'Orsay 75007 Paris, FR
Priority Data:
15/692,24731.08.2017US
Title (EN) CHEMISTRIES FOR ETCHING MULTI-STACKED LAYERS
(FR) COMPOSITIONS CHIMIQUES POUR LA GRAVURE DE COUCHES MULTIPLES EMPILÉES
Abstract:
(EN) Methods for fabricating a 3D NAND flash memory are disclosed. The method includes the steps of forming a hardmask pattern on the hardmask layer, and using the hardmask pattern to form apertures in the alternating layers by selectively plasma etching the alternating layers versus the hardmask layer using a hydrofluorocarbon etching gas selected from the group consisting of 1,1,1,3,3,3- hexafluoropropane (C3H2F6), 1,1,2,2,3, 3-hexafluoropropane (iso-C3H2F6), 1,1,1,2,3,3,3-heptafluoropropane (C3HF7), and 1,1,1,2,2,3,3-heptafluoropropane (iso- C3HF7), wherein the first etching layer comprises a material different from that of the second etching layer.
(FR) L'invention concerne des procédés de fabrication d'une mémoire flash NAND 3D. Le procédé consiste à former un motif de masque dur sur la couche de masque dur, et à utiliser le motif de masque dur pour former des ouvertures dans les couches alternées par gravure sélective au plasma des couches alternées par rapport à la couche de masque dur, à l'aide d'un gaz de gravure hydrofluorocarboné choisi dans le groupe constitué par 1,1,1,3,3,3-hexafluoropropane (C3H2F6), 1,1,2,2,3, 3-hexafluoropropane (iso-C3H2F6), 1,1,1,2,3,3,3-heptafluoropropane (C3HF7), et 1,1,1,2,2,3,3-heptafluoropropane (iso-C3HF7), la première couche de gravure comprenant un matériau différent de celui de la seconde couche de gravure.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)