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1. (WO2019043432) SINGLE CRYSTALLINE DIAMOND PART PRODUCTION METHOD FOR STAND ALONE SINGLE CRYSTALLINE MECHANICAL AND OPTICAL COMPONENT PRODUCTION
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2019/043432 International Application No.: PCT/IB2017/055200
Publication Date: 07.03.2019 International Filing Date: 30.08.2017
IPC:
C30B 29/04 (2006.01) ,C30B 29/60 (2006.01) ,C30B 33/12 (2006.01) ,B81C 99/00 (2010.01) ,G04B 13/00 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
04
Diamond
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
60
characterised by shape
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
08
Etching
12
in gas atmosphere or plasma
B PERFORMING OPERATIONS; TRANSPORTING
81
MICRO-STRUCTURAL TECHNOLOGY
C
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICRO-STRUCTURAL DEVICES OR SYSTEMS
99
Subject matter not provided for in other groups of this subclass
G PHYSICS
04
HOROLOGY
B
MECHANICALLY-DRIVEN CLOCKS OR WATCHES; MECHANICAL PARTS OF CLOCKS OR WATCHES IN GENERAL; TIME-PIECES USING THE POSITION OF THE SUN, MOON, OR STARS
13
Gearwork
Applicants:
ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL) [CH/CH]; EPFL-TTO EPFL Innovation Park J 1015 Lausanne, CH
Inventors:
QUACK, Niels; CH
TOROS, Adrien; CH
KISS, Marcell; CH
GRAZIOSI, Teodoro; CH
GALLO, Pascal; CH
Agent:
BYRNE, Declan; CH
Priority Data:
Title (EN) SINGLE CRYSTALLINE DIAMOND PART PRODUCTION METHOD FOR STAND ALONE SINGLE CRYSTALLINE MECHANICAL AND OPTICAL COMPONENT PRODUCTION
(FR) PROCÉDÉ DE PRODUCTION DE PIÈCE EN DIAMANT MONOCRISTALLIN POUR LA PRODUCTION D'UN COMPOSANT MÉCANIQUE ET OPTIQUE MONOCRISTALLIN AUTONOME
Abstract:
(EN) The present invention relates to a free-standing single crystalline diamond part and a single crystalline diamond part production method. The method includes the steps of: - providing a single crystalline diamond substrate or layer; - providing a first adhesion layer on the substrate or layer; - providing a second adhesion layer on the first adhesion layer: - providing a mask layer on the second adhesion layer; - forming at least one indentation or a plurality of indentations through the mask layer and the first and second adhesion layers to expose a portion or portions of the single crystalline diamond substrate or layer; and - etching the exposed portion or portions of the single crystalline diamond substrate or layer and etching entirely through the single crystalline diamond substrate or layer.
(FR) La présente invention concerne une pièce en diamant monocristallin autonome et un procédé de production de pièce en diamant monocristallin. Le procédé comprend les étapes consistant à : - fournir un substrat ou une couche de diamant monocristallin ; - fournir une première couche d'adhérence sur le substrat ou la couche ; - fournir une seconde couche d'adhérence sur la première couche d'adhérence : - fournir une couche de masque sur la seconde couche d'adhérence ; - former au moins une indentation ou une pluralité d'indentations à travers la couche de masque et les première et seconde couches d'adhérence pour exposer une partie ou des parties du substrat ou de la couche de diamant monocristallin ; et - graver la ou les parties exposées du substrat ou de la couche de diamant monocristallin et graver entièrement le substrat ou la couche de diamant monocristallin.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)