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1. (WO2019043006) METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT, AND IR DETECTOR
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Pub. No.: WO/2019/043006 International Application No.: PCT/EP2018/073138
Publication Date: 07.03.2019 International Filing Date: 28.08.2018
IPC:
H01L 33/44 (2010.01) ,H01L 33/46 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/54 (2010.01) ,H01L 33/50 (2010.01) ,H01L 33/58 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
54
having a particular shape
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
MÜLLER, Michael; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 120 168.801.09.2017DE
Title (EN) METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT, AND IR DETECTOR
(FR) PROCÉDÉ DE PRODUCTION D'UN COMPOSANT OPTOÉLECTRONIQUE, COMPOSANT OPTOÉLECTRONIQUE ET DÉTECTEUR À IR
(DE) VERFAHREN ZUR HERSTELLUNG EINES OPTOELEKTRONISCHEN BAUELEMENTS, OPTOELEKTRONISCHES BAUELEMENT UND IR-DETEKTOR
Abstract:
(EN) The invention relates to a method for producing an optoelectronic component, said method comprising the following steps: - providing an optoelectronic semiconductor chip (2) having a radiation passage surface (3) on a connection carrier (1), - applying a deformable spacer (7) to the radiation passage surface (3) of the semiconductor chip (2), - inserting the connection carrier (1) with the semiconductor chip (2) into the cavity of a tool (8), wherein the tool (8) deforms the deformable spacer (7), and - encasing the semiconductor chip (2) with a potting compound (9). The invention also relates to an optoelectronic component and an IR detector.
(FR) L'invention concerne un procédé pour produire un composant optoélectronique comprenant les étapes consistant : à préparer une puce à semi-conducteur (2) optoélectronique comportant une surface perméable au rayonnement (3) sur un support de connexion (1) ; à agencer un écarteur (7) déformable sur cette surface perméable au rayonnement (3) de la puce à semi-conducteur (2) ; à introduire le support de connexion (1) et la puce à semi-conducteur (2) dans la cavité d'un outil (8), cet outil (8) déformant l'écarteur (7) déformable, et ; à enrober la puce à semi-conducteur (2) au moyen d'un matériau d'enrobage (9). Cette invention se rapporte en outre à un composant optoélectronique et à un détecteur à IR.
(DE) Es wird ein Verfahren zur Herstellung eines optoelektronischen Bauelements mit den folgenden Schritten angegeben : - Bereitstellen eines optoelektronischen Halbleiterchips (2) mit einer Strahlungsdurchtrittsfläche (3) auf einem Anschlussträger (1), - Aufbringen eines verformbaren Abstandshalters (7) auf die Strahlungsdurchtrittsfläche (3) des Halbleiterchips (2), - Einbringen des Anschlussträgers (1) mit dem Halbleiterchip (2) in die Kavität eines Werkzeugs (8), wobei das Werkzeug (8) den verformbaren Abstandshalter (7) verformt, und - Umhüllen des Halbleiterchips (2) mit einer Vergussmasse (9). Weiterhin werden ein optoelektronisches Bauelement und ein IR-Detektor angegeben.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)