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1. (WO2019042979) SILICON SINGLE CRYSTAL WITH <100> ORIENTATION, WHICH IS DOPED WITH DOPANT OF N-TYPE, AND METHOD FOR PRODUCING SUCH A SINGLE CRYSTAL
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Pub. No.: WO/2019/042979 International Application No.: PCT/EP2018/073101
Publication Date: 07.03.2019 International Filing Date: 28.08.2018
Chapter 2 Demand Filed: 30.01.2019
IPC:
C30B 15/20 (2006.01) ,C30B 29/06 (2006.01) ,C30B 15/22 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15
Single-crystal growth by pulling from a melt, e.g. Czochralski method
20
Controlling or regulating
22
Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
Applicants:
SILTRONIC AG [DE/DE]; Hanns-Seidel-Platz 4 81737 München, DE
Inventors:
RAMING, Georg; DE
STOCKMEIER, Ludwig; DE
FRIEDRICH, Jochen; DE
DANIEL, Matthias; DE
MILLER, Alfred; DE
Agent:
STAUDACHER, Wolfgang; DE
Priority Data:
10 2017 215 332.601.09.2017DE
Title (EN) SILICON SINGLE CRYSTAL WITH <100> ORIENTATION, WHICH IS DOPED WITH DOPANT OF N-TYPE, AND METHOD FOR PRODUCING SUCH A SINGLE CRYSTAL
(FR) MONOCRISTAL DE SILICIUM AYANT UNE ORIENTATION <100> QUI EST DOPÉ AVEC UN DOPANT DE TYPE N ET PROCÉDÉ POUR PRODUIRE CE TYPE DE MONOCRISTAL
(DE) EINKRISTALL AUS SILIZIUM MIT <100>-ORIENTIERUNG, DER MIT DOTIERSTOFF VOM N-TYP DOTIERT IST, UND VERFAHREN ZUR HERSTELLUNG EINES SOLCHEN EINKRISTALLS
Abstract:
(EN) The invention relates to a silicon single crystal with <100> orientation and a method for producing a silicon single crystal with <100> orientation. The single crystal is doped with a dopant of the n-type and comprises a starting cone, a cylindrical portion and an end cone, wherein a crystal angle in a center portion of the starting cone, the length of which equals not less than 50% of a length of the starting cone, is not less than 20° and not greater than 30°, and edge facets extend from an edge of the single crystal into the single crystal, wherein the edge facets in the starting cone and in the cylindrical portion of the single crystal each have a length not greater than 700 μm.
(FR) La présente invention concerne un monocristal de silicium ayant une orientation <100> et un procédé pour produire un monocristal de silicium ayant une orientation <100>. Le monocristal est dopé avec un dopant de type N et comprend un cône de départ, un segment cylindrique et un cône final, un angle de cristal dans un segment central du cône de départ, dont la longueur représente pas moins de 50 % d'une longueur du cône de départ, qui n'est pas inférieur à 20° et pas supérieur à 30°. Des arêtes-facettes s'étendent d'un bord du monocristal dans le monocristal, les arêtes-facettes, dans le cône de départ et dans le segment cylindrique du monocristal, ayant respectivement une longueur n'excédant pas 700 μm.
(DE) Einkristall aus Silizium mit <100>-Orientierung und Verfahren zur Herstellung eines Einkristalls aus Silizium mit <100>-Orientierung. Der Einkristall ist mit Dotierstoff vom n-Typ dotiert und umfasst einen Anfangskonus, einen zylindrischen Abschnitt und einen Endkonus, wobei ein Kristallwinkel in einem mittleren Abschnitt des Anfangskonus, dessen Länge nicht weniger als 50 % einer Länge des Anfangskonus beträgt, nicht kleiner als 20° und nicht größer als 30° ist, und es erstrecken sich Kanten-Facetten von einem Rand des Einkristalls in den Einkristall, wobei die Kanten- Facetten im Anfangskonus und im zylindrischen Abschnitt des Einkristalls jeweils eine Länge haben, die nicht mehr als 700 μιτι beträgt.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)