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1. (WO2019042894) SEMICONDUCTOR BODY AND METHOD FOR PRODUCING A SEMICONDUCTOR BODY
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Pub. No.: WO/2019/042894 International Application No.: PCT/EP2018/072906
Publication Date: 07.03.2019 International Filing Date: 24.08.2018
IPC:
H01L 33/00 (2010.01) ,H01L 33/06 (2010.01) ,H01L 33/14 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/02 (2010.01) ,H01L 33/04 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
DRAGO, Massimo; DE
FREY, Alexander; DE
HERTKORN, Joachim; DE
KOSLOW, Ingrid; DE
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
10 2017 120 302.804.09.2017DE
Title (EN) SEMICONDUCTOR BODY AND METHOD FOR PRODUCING A SEMICONDUCTOR BODY
(FR) CORPS SEMI-CONDUCTEUR ET PROCÉDÉ DE FABRICATION D’UN CORPS SEMI-CONDUCTEUR
(DE) HALBLEITERKÖRPER UND VERFAHREN ZUR HERSTELLUNG EINES HALBLEITERKÖRPERS
Abstract:
(EN) The invention relates to a semiconductor body (10) based on a nitride compound semiconductor material, having a p-conducting region (100), in which the p-conductive region (100) has a barrier zone (110) and a contact zone (120). The barrier zone (110) has a first magnesium concentration (M110) and a first aluminum concentration (A110), and the contact zone (120) has a second magnesium concentration (M120) and a second aluminum concentration (A120). The first aluminum concentration (A110) is greater than the second aluminum concentration (A120), and the first magnesium concentration (M110) is smaller than the second magnesium concentration (M120). The contact zone (120) forms an outwardly exposed surface (10a) of the semiconductor body (10), and the barrier zone (110) adjoins the contact zone (120).
(FR) L’invention concerne un corps semi-conducteur (10) à base d’un matériau semi-conducteur composé de nitrure pourvu d’une zone conductrice de type p (100), tel que - la zone conductrice de type p (100) comporte une zone de barrière (110) et une zone de contact (120), - la zone de barrière (110) présentant une première concentration en magnésium (M110) et une première concentration en aluminium (A110), - la zone de contact (120) présentant une deuxième concentration en magnésium (M120) et une deuxième concentration en aluminium (A120), - la première concentration en aluminium (A110) étant supérieure à la deuxième concentration en aluminium (A120), - la première concentration en magnésium (M110) étant inférieure à la deuxième concentration en magnésium (M120), - la zone de contact (120) constituant une surface libre vers l’extérieur (10a) du corps semi-conducteur (10), et - la zone de barrière (110) étant adjacente à la zone de contact (120).
(DE) Halbleiterkörper (10) basierend auf einem Nitridverbindungshalbleitermaterial mit einem p-leitenden Bereich (100), bei dem - der p-leitende Bereich (100) eine Barrierezone (110) und eine Kontaktzone (120) aufweist, wobei - die Barrierezone (110) eine erste Magnesiumkonzentration (M110) und eine erste Aluminiumkonzentration (A110) aufweist, - die Kontaktzone (120) eine zweite Magnesiumkonzentration (M120) und eine zweite Aluminiumkonzentration (A120) aufweist, - die erste Aluminiumkonzentration (A110) größer als die zweite Aluminiumkonzentration (A120) ist, - die erste Magnesiumkonzentration (M110) kleiner als die zweite Magnesiumkonzentration (M120) ist, - die Kontaktzone (120) eine nach außen freiliegende Fläche (10a) des Halbleiterkörpers (10) bildet, und - die Barrierezone (110) an die Kontaktzone (120) angrenzt.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)