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1. WO2019042811 - VERTICAL POWER TRANSISTOR WITH A HIGH LEVEL OF CONDUCTIVITY AND HIGH REVERSE-BIASING PERFORMANCE

Publication Number WO/2019/042811
Publication Date 07.03.2019
International Application No. PCT/EP2018/072474
International Filing Date 21.08.2018
IPC
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
H01L 29/417 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
41characterised by their shape, relative sizes or dispositions
417carrying the current to be rectified, amplified or switched
H01L 29/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02Semiconductor bodies
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H01L 21/266 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
266using masks
H01L 21/331 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33the devices comprising three or more electrodes
331Transistors
CPC
H01L 21/0465
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
0455Making n or p doped regions or layers, e.g. using diffusion
046using ion implantation
0465using masks
H01L 21/0475
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
0445the devices having semiconductor bodies comprising crystalline silicon carbide
0475Changing the shape of the semiconductor body, e.g. forming recesses,
H01L 29/0619
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
0619with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
H01L 29/063
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
063Reduced surface field [RESURF] pn-junction structures
H01L 29/0634
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0603characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
0607for preventing surface leakage or controlling electric field concentration
0611for increasing or controlling the breakdown voltage of reverse biased devices
0615by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
063Reduced surface field [RESURF] pn-junction structures
0634Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
H01L 29/0661
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
02Semiconductor bodies ; ; Multistep manufacturing processes therefor
06characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; ; characterised by the concentration or distribution of impurities within semiconductor regions
0657characterised by the shape of the body
0661specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Applicants
  • ROBERT BOSCH GMBH [DE]/[DE]
Inventors
  • BARTOLF, Holger
  • FEILER, Wolfgang
  • SCHWAIGER, Stephan
  • ALSMEIER, Jan-Hendrik
  • NEUBAUER, Matthias
Priority Data
10 2017 215 029.729.08.2017DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERTIKALER LEISTUNGSTRANSISTOR MIT HOHER LEITFÄHIGKEIT UND HOHEM SPERRVERHALTEN
(EN) VERTICAL POWER TRANSISTOR WITH A HIGH LEVEL OF CONDUCTIVITY AND HIGH REVERSE-BIASING PERFORMANCE
(FR) TRANSISTOR DE PUISSANCE VERTICAL À CONDUCTIVITÉ ÉLEVÉE ET COMPORTEMENT DE BLOCAGE ÉLEVÉ
Abstract
(DE)
Vertikaler Leistungstransistor (200, 300) mit einem Halbleitersubstrat, das eine Vorderseite aufweist, auf der mindestens eine Epitaxieschicht (202, 302), eine Kanalschicht und eine Sourceschicht angeordnet sind, wobei die Epitaxieschicht (202, 302) ein erstes Halbleitermaterial umfasst, das eine erste Dotierung aufweist, und einer Mehrzahl von ersten Gräben (205, 305) und zweiten Gräben (212, 312), wobei die ersten Gräben (205, 305) und die zweiten Gräben (212, 312) alternierend angeordnet sind und sich ausgehend von einer Oberfläche der Sourceschicht senkrecht bis mindestens in die Kanalschicht erstrecken, dadurch gekennzeichnet, dass sich ausgehend von einer Unterseite eines jeden ersten Grabenbodens (205, 305) ein Gebiet senkrecht in die Epitaxieschicht (202, 302) erstreckt, wobei das Gebiet ein zweites Halbleitermaterial umfasst, das eine zweite Dotierung aufweist.
(EN)
The invention relates to a vertical power transistor (200, 300) comprising a semiconductor substrate having a front side on which at least one epitaxial layer (202, 302), a channel layer and a source layer are arranged, the epitaxial layer (202, 302) comprising a first semiconductor material with a first doping, and a plurality of first trenches (205, 305) and second trenches (212, 312), the first trenches (205, 305) and the second trenches (212, 312) being alternately arranged and extending perpendicularly from a surface of the source layer at least into the channel layer. The invention is characterised in that a region extends perpendicularly from a lower side of each first trench bottom (205, 305) into the epitaxial layer (202, 302), said region comprising a second semiconductor material with a second doping.
(FR)
L’invention concerne un transistor de puissance vertical (200, 300) comportant un substrat semi-conducteur qui comporte une face avant sur laquelle sont disposées au moins une couche épitaxiale (202, 302), une couche de canal et une couche source, la couche épitaxiale (202, 302) comprenant un premier matériau semi-conducteur ayant un premier dopage, et une pluralité de premières tranchées (205, 305) et de deuxièmes tranchées (212, 312). Les premières tranchées (205, 305) et les deuxièmes tranchées (212, 312) sont disposées en alternance et s’étendent depuis au moins une surface de la couche de source perpendiculairement jusque dans la couche de canal. L’invention est caractérisée en ce que, à partir de la face inférieure de chaque premier fond de tranchée (205, 305), une zone s’étend perpendiculairement jusque dans la couche épitaxiale (202, 302). La zone comprend un deuxième matériau semi-conducteur ayant un deuxième dopage.
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