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1. (WO2019042811) VERTICAL POWER TRANSISTOR WITH A HIGH LEVEL OF CONDUCTIVITY AND HIGH REVERSE-BIASING PERFORMANCE
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Pub. No.: WO/2019/042811 International Application No.: PCT/EP2018/072474
Publication Date: 07.03.2019 International Filing Date: 21.08.2018
IPC:
H01L 29/78 (2006.01) ,H01L 29/417 (2006.01) ,H01L 29/06 (2006.01) ,H01L 21/266 (2006.01) ,H01L 21/331 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
417
carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26
Bombardment with wave or particle radiation
263
with high-energy radiation
265
producing ion implantation
266
using masks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
Applicants:
ROBERT BOSCH GMBH [DE/DE]; Postfach 30 02 20 70442 Stuttgart, DE
Inventors:
BARTOLF, Holger; DE
FEILER, Wolfgang; DE
SCHWAIGER, Stephan; DE
ALSMEIER, Jan-Hendrik; DE
NEUBAUER, Matthias; DE
Priority Data:
10 2017 215 029.729.08.2017DE
Title (EN) VERTICAL POWER TRANSISTOR WITH A HIGH LEVEL OF CONDUCTIVITY AND HIGH REVERSE-BIASING PERFORMANCE
(FR) TRANSISTOR DE PUISSANCE VERTICAL À CONDUCTIVITÉ ÉLEVÉE ET COMPORTEMENT DE BLOCAGE ÉLEVÉ
(DE) VERTIKALER LEISTUNGSTRANSISTOR MIT HOHER LEITFÄHIGKEIT UND HOHEM SPERRVERHALTEN
Abstract:
(EN) The invention relates to a vertical power transistor (200, 300) comprising a semiconductor substrate having a front side on which at least one epitaxial layer (202, 302), a channel layer and a source layer are arranged, the epitaxial layer (202, 302) comprising a first semiconductor material with a first doping, and a plurality of first trenches (205, 305) and second trenches (212, 312), the first trenches (205, 305) and the second trenches (212, 312) being alternately arranged and extending perpendicularly from a surface of the source layer at least into the channel layer. The invention is characterised in that a region extends perpendicularly from a lower side of each first trench bottom (205, 305) into the epitaxial layer (202, 302), said region comprising a second semiconductor material with a second doping.
(FR) L’invention concerne un transistor de puissance vertical (200, 300) comportant un substrat semi-conducteur qui comporte une face avant sur laquelle sont disposées au moins une couche épitaxiale (202, 302), une couche de canal et une couche source, la couche épitaxiale (202, 302) comprenant un premier matériau semi-conducteur ayant un premier dopage, et une pluralité de premières tranchées (205, 305) et de deuxièmes tranchées (212, 312). Les premières tranchées (205, 305) et les deuxièmes tranchées (212, 312) sont disposées en alternance et s’étendent depuis au moins une surface de la couche de source perpendiculairement jusque dans la couche de canal. L’invention est caractérisée en ce que, à partir de la face inférieure de chaque premier fond de tranchée (205, 305), une zone s’étend perpendiculairement jusque dans la couche épitaxiale (202, 302). La zone comprend un deuxième matériau semi-conducteur ayant un deuxième dopage.
(DE) Vertikaler Leistungstransistor (200, 300) mit einem Halbleitersubstrat, das eine Vorderseite aufweist, auf der mindestens eine Epitaxieschicht (202, 302), eine Kanalschicht und eine Sourceschicht angeordnet sind, wobei die Epitaxieschicht (202, 302) ein erstes Halbleitermaterial umfasst, das eine erste Dotierung aufweist, und einer Mehrzahl von ersten Gräben (205, 305) und zweiten Gräben (212, 312), wobei die ersten Gräben (205, 305) und die zweiten Gräben (212, 312) alternierend angeordnet sind und sich ausgehend von einer Oberfläche der Sourceschicht senkrecht bis mindestens in die Kanalschicht erstrecken, dadurch gekennzeichnet, dass sich ausgehend von einer Unterseite eines jeden ersten Grabenbodens (205, 305) ein Gebiet senkrecht in die Epitaxieschicht (202, 302) erstreckt, wobei das Gebiet ein zweites Halbleitermaterial umfasst, das eine zweite Dotierung aufweist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)