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1. (WO2019042526) OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR FORMING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE
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Pub. No.: WO/2019/042526 International Application No.: PCT/EP2017/071558
Publication Date: 07.03.2019 International Filing Date: 28.08.2017
IPC:
H01L 33/50 (2010.01) ,H01L 33/64 (2010.01) ,H01L 25/075 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
64
Heat extraction or cooling elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
075
the devices being of a type provided for in group H01L33/78
Applicants:
OSRAM OPTO SEMICONDUCTORS GMBH [DE/DE]; Leibnizstr. 4 93055 Regensburg, DE
Inventors:
ALIAS, Asliza; MY
KHOO, Lay Sin; MY
Agent:
EPPING HERMANN FISCHER PATENTANWALTSGESELLSCHAFT MBH; Schloßschmidstr. 5 80639 München, DE
Priority Data:
Title (EN) OPTOELECTRONIC SEMICONDUCTOR DEVICE AND METHOD FOR FORMING AN OPTOELECTRONIC SEMICONDUCTOR DEVICE
(FR) DISPOSITIF À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE ET PROCÉDÉ DE FORMATION DE DISPOSITIF À SEMI-CONDUCTEUR OPTOÉLECTRONIQUE
Abstract:
(EN) An optoelectronic semiconductor device (10) is provided, the optoelectronic semiconductor device (10) comprising a carrier (11) having a main plane of extension and at least one semiconductor chip (12) arranged on the carrier (11). The optoelectronic semiconductor device (10) further comprises a frame (13) which is arranged on the carrier (11) and which surrounds the at least one semiconductor chip (12) in lateral directions (x, y) which are parallel to the main plane of extension of the carrier (11), and a conversion layer (14) covering the at least one semiconductor chip (12) and the frame (13). The at least one semiconductor chip (12) extends further in a vertical direction (z) than the frame (13), where the vertical direction (z) is perpendicular to the main plane of extension of the carrier (11). Furthermore, the at least one semiconductor chip (12) is configured to emit electromagnetic radiation during operation of the optoelectronic semiconductor device (10), and the frame (13) and the at least one semiconductor chip (12) are spaced from each other in the lateral directions (x, y) by a gap (15). Moreover, a method for forming the optoelectronic semiconductor device (10) is provided.
(FR) L'invention concerne un dispositif à semi-conducteur optoélectronique (10), le dispositif semi-conducteur optoélectronique (10) comprenant un support (11) ayant un plan principal d'extension et au moins une puce semi-conductrice (12) disposée sur le support (11). Le dispositif à semi-conducteur optoélectronique (10) comprend en outre un cadre (13) qui est disposé sur le support (11) et qui entoure l'au moins une puce semi-conductrice (12) dans des directions latérales (x, y) qui sont parallèles au plan principal d'extension du support (11), et une couche de conversion (14) recouvrant l'au moins une puce semi-conductrice (12) et le cadre (13). L'au moins une puce semi-conductrice (12) s'étend davantage dans une direction verticale (z) que le cadre (13), la direction verticale (z) étant perpendiculaire au plan principal d'extension du support (11). En outre, l'au moins une puce semi-conductrice (12) est configurée pour émettre un rayonnement électromagnétique pendant le fonctionnement du dispositif à semi-conducteur optoélectronique (10), et le cadre (13) et l'au moins une puce semi-conductrice (12) sont espacés l'un de l'autre dans les directions latérales (x, y) par un espace (15). L'invention concerne en outre un procédé de formation du dispositif à semi-conducteur optoélectronique (10).
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)