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1. (WO2019042191) CLASS OF ERBIUM ION-DOPED SILICATE CRYSTALS AND 1.5 μM BAND LASER DEVICE USING SAME
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Pub. No.: WO/2019/042191 International Application No.: PCT/CN2018/101587
Publication Date: 07.03.2019 International Filing Date: 21.08.2018
IPC:
H01S 3/16 (2006.01) ,C30B 29/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
S
DEVICES USING STIMULATED EMISSION
3
Lasers, i.e. devices for generation, amplification, modulation, demodulation, or frequency-changing, using stimulated emission, of infra-red, visible, or ultra-violet waves
14
characterised by the material used as the active medium
16
Solid materials
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10
Inorganic compounds or compositions
34
Silicates
Applicants:
中国科学院福建物质结构研究所 FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER, CHINESE ACADEMY OF SCIENCES [CN/CN]; 中国福建省福州市 杨桥西路155号 155 Yangqiao Road West Fuzhou, Fujian 350002, CN
Inventors:
黄艺东 HUANG, Yidong; CN
陈雨金 CHEN, Yujin; CN
龚国亮 GONG, Guoliang; CN
黄建华 HUANG, Jianhua; CN
林炎富 LIN, Yanfu; CN
龚兴红 GONG, Xinghong; CN
罗遵度 LUO, Zundu; CN
Agent:
北京知元同创知识产权代理事务所(普通合伙) BEIJING ORIGINTELLIGENCE IP LAW FIRM; 中国北京市 海淀区上地三街9号嘉华大厦E座1004室刘元霞 LIU Yuanxia Room 1004, Tower E, Jiahua Building No.9, Shangdi 3rd Street, Haidian District, Beijing 100085, CN
Priority Data:
201710780466.101.09.2017CN
Title (EN) CLASS OF ERBIUM ION-DOPED SILICATE CRYSTALS AND 1.5 μM BAND LASER DEVICE USING SAME
(FR) CLASSE DE CRISTAUX DE SILICATE DOPÉS AUX IONS ERBIUM ET DISPOSITIF LASER À BANDE DE 1,5 μM L'UTILISANT
(ZH) 一类铒离子掺杂的硅酸盐晶体及其1.5微米波段激光器件
Abstract:
(EN) The present invention relates to a class of erbium ion-doped silicate crystals and a 1.5 μm band laser device using the same. The crystal of the present invention has a general chemical formula of (ErxYbyCezA(1-x-y-z))3RM3Si2O14, wherein x has a range of 0.002 to 0.02, y has a range of 0.005 to 0.1, and z has a range of 0 to 0.15; A is one, two, or three elements of Ca, Sr, and Ba; R is one or two elements of Nb and Ta; M is one or two elements of Al and Ga. By adopting the crystal as a gain medium and employing semiconductor laser pumping in a 940 nm or 980 nm band, a 1.5 μm band solid-state pulsed laser with high output power, high efficiency, continuous and high energy, and narrow pulse width can be obtained.
(FR) La présente invention concerne une classe de cristaux de silicate dopés aux ions erbium et un dispositif laser à bande de 1,5 µm l'utilisant. Le cristal de la présente invention a une formule chimique générale (ErxYbyCezA(1-x-y-z))3RM3Si2O14, dans laquelle x a une plage de 0,002 à 0,02, y a une plage de 0,005 à 0,1, et z a une plage de 0 à 0,15 ; A est un, deux ou trois éléments de Ca, Sr et Ba ; R représente un ou deux éléments de Nb et de Ta ; M représente un ou deux éléments d'Al et de Ga. En adoptant le cristal comme milieu de gain et en employant un pompage laser à semi-conducteur dans une bande de 940 nm ou 980 nm, un laser à impulsions à semi-conducteur à bande de 1,5 µm avec une puissance de sortie élevée, une efficacité élevée, une énergie continue et élevée, et une largeur d'impulsion étroite peut être obtenu.
(ZH) 本发明涉及一类铒离子掺杂的硅酸盐晶体及其1.5微米波段激光器件。本发明所述晶体的化学通式为(Er xYb yCe zA (1-x-y-z)) 3RM 3Si 2O 14,其中x的范围为0.002~0.02,y的范围为0.005~0.1,z的范围为0~0.15;A为Ca,Sr和Ba中的某一种元素、某两种元素或者三种元素;R为Nb和Ta中的某一种元素或者两种元素;M为Al和Ga元素中的某一种元素或者两种元素。采用所述晶体作为增益介质,利用940nm或980nm波段的半导体激光泵浦,可获得高输出功率、高效率的连续和高能量、窄脉宽的脉冲1.5μm波段固体激光。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)