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1. (WO2019042103) MEMORY CELL STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
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Pub. No.: WO/2019/042103 International Application No.: PCT/CN2018/099378
Publication Date: 07.03.2019 International Filing Date: 08.08.2018
IPC:
H01L 27/11578 (2017.01) ,H01L 27/11573 (2017.01)
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Applicants:
YANGTZE MEMORY TECHNOLOGIES CO., LTD. [CN/CN]; Room 7018, No.18, Huaguang Road Guandong Science and Technology Industrial Park East Lake High-Tech Development Zone Wuhan, Hubei 430074, CN
Inventors:
DAI, Xiaowang; CN
LU, Zhenyu; CN
CHEN, Jun; CN
TAO, Qian; CN
HU, Yushi; CN
ZHU, Jifeng; CN
DONG, Jinwen; CN
XIA, Ji; CN
ZHANG, Zhong; CN
LI, Yanni; CN
Agent:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD.; 10th Floor, Tower C, Beijing Global Trade Center 36 North Third Ring Road East, Dongcheng District Beijing 100013, CN
Priority Data:
201710749865.128.08.2017CN
Title (EN) MEMORY CELL STRUCTURE OF THREE-DIMENSIONAL MEMORY DEVICE
(FR) STRUCTURE DE CELLULE DE MÉMOIRE DE DISPOSITIF DE MÉMOIRE TRIDIMENSIONNEL
Abstract:
(EN) Various embodiments disclose a 3D memory device, including a substrate; a plurality of conductor layers disposed on the substrate; a plurality of NAND strings disposed on the substrate; and a plurality of slit structures disposed on the substrate. The plurality of NAND strings can be arranged perpendicular to the substrate and in a hexagonal lattice orientation including a plurality of hexagons, and each hexagon including three pairs of sides with a first pair perpendicular to a first direction and parallel to a second direction. The second direction is perpendicular to the first direction. The plurality of slit structures can extend in the first direction.
(FR) Divers modes de réalisation de la présente invention concernent un dispositif de mémoire 3D, comprenant un substrat ; une pluralité de couches conductrices disposées sur le substrat ; une pluralité de chaînes NON-ET disposées sur le substrat ; et une pluralité de structures à fentes disposées sur le substrat. La pluralité de chaînes NON-ET peuvent être disposées perpendiculairement au substrat et dans une orientation de réseau hexagonal comprenant une pluralité d'hexagones, et chaque hexagone comprenant trois paires de côtés ayant une première paire perpendiculaire à une première direction et parallèle à une seconde direction. La seconde direction est perpendiculaire à la première direction. La pluralité de structures à fentes peuvent s'étendre dans la première direction.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)