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1. (WO2019042088) METHOD FOR PREPARING TEXTURED SURFACE ON SURFACE OF CRYSTALLINE SILICON
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Pub. No.: WO/2019/042088 International Application No.: PCT/CN2018/098680
Publication Date: 07.03.2019 International Filing Date: 03.08.2018
IPC:
H01L 31/18 (2006.01) ,C30B 33/10 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
33
After-treatment of single crystals or homogeneous polycrystalline material with defined structure
08
Etching
10
in solutions or melts
Applicants:
苏州易益新能源科技有限公司 SHARESUN CO., LTD. [CN/CN]; 中国江苏省苏州市 吴中区越溪街道前珠路18-38号2幢 Building 2, No.18-38 Qianzhu Road, Wuzhong District Suzhou, Jiangsu 215100, CN
Inventors:
覃榆森 QIN, Yusen; CN
季静佳 JI, Jingjia; CN
Priority Data:
201710787640.504.09.2017CN
Title (EN) METHOD FOR PREPARING TEXTURED SURFACE ON SURFACE OF CRYSTALLINE SILICON
(FR) PROCÉDÉ DE PRÉPARATION D'UNE SURFACE TEXTURÉE SUR UNE SURFACE DE SILICIUM CRISTALLISÉ
(ZH) 一种在晶体硅表面制备绒面的方法
Abstract:
(EN) A method for preparing a textured surface on a surface of a crystalline silicon wafer, comprising generating a chemical conversion coating on a surface of a crystalline silicon wafer, and implementing chemical etching on a partial surface of the crystalline silicon wafer by virtue of the non-uniformity and discontinuity of the chemical conversion coating during growth thereof, thereby achieving the purpose of preparing a textured surface on the surface of the crystalline silicon wafer.
(FR) L'invention concerne un procédé de préparation d'une surface texturée sur une surface d'une tranche de silicium cristallisé, consistant à générer un revêtement de conversion chimique sur une surface d'une tranche de silicium cristallisé, et à mettre en œuvre une gravure chimique sur une surface partielle de la tranche de silicium cristallisé en vertu de la non-uniformité et de la discontinuité du revêtement de conversion chimique pendant la croissance de celui-ci, ce qui permet de réaliser une surface texturée sur la surface de la tranche de silicium cristallisé.
(ZH) 一种在晶体硅片表面制备绒面的方法,其特征是在晶体硅片表面生成一层化学转化膜,利用化学转化膜在生长过程中的不均匀性和不连续性,对晶体硅片的局部表面实施化学腐蚀,达到在晶体硅片表面制备绒面的目的。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)