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1. (WO2019042084) METHOD FOR SELECTIVE TEXTURE PREPARATION ON SURFACE OF CRYSTALLINE SILICON WAFER
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Pub. No.: WO/2019/042084 International Application No.: PCT/CN2018/098588
Publication Date: 07.03.2019 International Filing Date: 03.08.2018
IPC:
H01L 21/306 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
苏州易益新能源科技有限公司 SHARESUN CO., LTD. [CN/CN]; 中国江苏省苏州市吴中市 越溪街道前珠路18-38号2幢 Building 2, No.18-38 Qianzhu Road, Wuzhong District Suzhou, Jiangsu 215100, CN
Inventors:
季静佳 JI, Jingjia; CN
覃榆森 QIN, Yusen; CN
Priority Data:
201710787717.904.09.2017CN
Title (EN) METHOD FOR SELECTIVE TEXTURE PREPARATION ON SURFACE OF CRYSTALLINE SILICON WAFER
(FR) PROCÉDÉ DE PRÉPARATION DE TEXTURE SÉLECTIVE SUR LA SURFACE D'UNE TRANCHE DE SILICIUM CRISTALLIN
(ZH) 一种在晶体硅片表面选择性制备绒面的方法
Abstract:
(EN) The present invention discloses a method for texture preparation by carrying out chemical solution etching on the surface of a crystalline silicon wafer. The method for texture preparation by carrying out chemical solution etching on the surface of a crystalline silicon wafer disclosed in the present invention applies a texturing additive to the surface of a crystalline silicon wafer to be textured prior to a chemical solution etching step. In this way the method differs from the current commonly used method of direct addition of a texturing additive to a chemical etching texturing solution. The texturing additive applied on the surface of the crystalline silicon wafer does not react with the crystalline silicon wafer, and the surface of the crystalline silicon wafer applied with the texturing additive is wetted by the chemical etching solution, so as to carry out chemical etching on the surface of the crystalline silicon wafer for texture preparation.
(FR) La présente invention concerne un procédé de préparation de texture par mise en œuvre d'une gravure chimique en solution sur la surface d'une tranche de silicium cristallin. Le procédé de préparation de texture par mise en œuvre d'une gravure en solution chimique sur la surface d'une tranche de silicium cristallin selon la présente invention consiste à appliquer un additif de texturation sur la surface d'une tranche de silicium cristallin à texturer avant une étape de gravure chimique en solution. Ainsi, le procédé diffère du procédé actuel couramment utilisé consistant à ajouter directement un additif de texturation à une solution de texturation par gravure chimique. L'additif de texturation appliqué sur la surface de la tranche de silicium cristallin ne réagit pas avec la tranche de silicium cristallin, et la surface de la tranche de silicium cristallin appliquée avec l'additif de texturation est mouillée par la solution chimique de gravure, de façon à réaliser une gravure chimique sur la surface de la tranche de silicium cristallin en vue d'une préparation de texture.
(ZH) 本发明公开了一种在晶体硅片表面实施化学溶液腐蚀制备绒面的方法。本发明所公开的在晶体硅片表面实施化学溶液腐蚀制备绒面的方法是,与目前普遍采用的把制绒添加剂直接加入到化学腐蚀制绒溶液中不同,而是在对晶体硅片实施化学溶液腐蚀制备绒面步骤之前,把制绒添加剂涂布在需要被制绒的晶体硅片表面上。在晶体硅片表面上所涂布的制绒添加剂不与晶体硅片发生反应,然后使化学腐蚀溶液润湿被制绒添加剂涂布的晶体硅片表面,对该晶体硅片的表面实施化学腐蚀制备绒面的步骤。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)