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1. (WO2019041976) METHOD OF FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
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Pub. No.: WO/2019/041976 International Application No.: PCT/CN2018/091784
Publication Date: 07.03.2019 International Filing Date: 19.06.2018
IPC:
H01L 21/77 (2017.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
Applicants:
BOE TECHNOLOGY GROUP CO., LTD. [CN/CN]; No.10 Jiuxianqiao Rd., Chaoyang District Beijing 100015, CN
Inventors:
BAN, Shengguang; CN
CAO, Zhanfeng; CN
YAO, Qi; CN
Agent:
TEE & HOWE INTELLECTUAL PROPERTY ATTORNEYS; CHEN, Yuan 10th Floor, Tower D, Minsheng Financial Center 28 Jianguomennei Avenue, Dongcheng District Beijing 100005, CN
Priority Data:
201710772525.031.08.2017CN
Title (EN) METHOD OF FABRICATING ARRAY SUBSTRATE, ARRAY SUBSTRATE, AND DISPLAY APPARATUS
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT DE RÉSEAU, SUBSTRAT DE RÉSEAU ET APPAREIL D'AFFICHAGE
Abstract:
(EN) The present application provides an array substrate. The array substrate includes a base substrate; a light shielding layer on the base substrate; a metal oxide layer on a side of the light shielding layer distal to the base substrate; and an active layer on a side of the metal oxide layer distal to the base substrate. The metal oxide layer includes a metal oxide material. The light shielding layer includes amorphous silicon. An orthographic projection of the light shielding layer on the base substrate substantially overlaps with an orthographic projection of the active layer on the base substrate, and substantially overlaps with an orthographic projection of the metal oxide layer on the base substrate.
(FR) La présente invention se rapporte à un substrat de réseau. Le substrat de réseau comprend un substrat de base; une couche de protection contre la lumière sur le substrat de base; une couche d'oxyde métallique sur un côté de la couche de protection contre la lumière distal par rapport au substrat de base; et une couche active sur un côté de la couche d'oxyde métallique distal par rapport au substrat de base. La couche d'oxyde métallique comprend un matériau d'oxyde métallique. La couche de protection contre la lumière comprend du silicium amorphe. Une projection orthographique de la couche de protection contre la lumière sur le substrat de base chevauche sensiblement une projection orthographique de la couche active sur le substrat de base, et chevauche sensiblement une projection orthographique de la couche d'oxyde métallique sur le substrat de base.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)