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1. (WO2019041894) A FLEXIBLE THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
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Pub. No.: WO/2019/041894 International Application No.: PCT/CN2018/087309
Publication Date: 07.03.2019 International Filing Date: 17.05.2018
IPC:
H01L 27/32 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
28
including components using organic materials as the active part, or using a combination of organic materials with other materials as the active part
32
with components specially adapted for light emission, e.g. flat-panel displays using organic light-emitting diodes
Applicants:
昆山国显光电有限公司 KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD. [CN/CN]; 中国江苏省昆山 开发区龙腾路1号4幢 Building 4 No.1, Longteng Road, Development Zone Kunshan, Jiangsu 215300, CN
Inventors:
来春荣 LAI, Chunrong; CN
宗记文 ZONG, Jiwen; CN
Agent:
北京布瑞知识产权代理有限公司 BEIJING BRIGHT IP AGENCY CO., LTD.; 中国北京市 朝阳区广顺北大街5号院内32号B228 B228, No. 32, Inside the No. 5 Yard Guangshun North Street, Chaoyang District Beijing 100102, CN
Priority Data:
201710776518.831.08.2017CN
Title (EN) A FLEXIBLE THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
(FR) TRANSISTOR À COUCHE MINCE FLEXIBLE ET SON PROCÉDÉ DE FABRICATION
(ZH) 一种柔性薄膜晶体管及其制备方法
Abstract:
(EN) The present invention discloses a flexible thin-film transistor and a manufacturing method thereof. The thin-film transistor comprises a substrate; an active layer formed on top of the substrate; a gate layer formed on top of the active layer; and an organic insulating layer formed on top of the gate layer. The invention reduces the stress of an interlayer dielectric layer and reduces overall thickness of the interlayer dielectric layer, thereby increasing the degree to which a flexible display screen can bend.
(FR) La présente invention concerne un transistor à couche mince flexible et son procédé de fabrication. Le transistor à couche mince comprend un substrat; une couche active formée sur le dessus du substrat; une couche de grille formée sur le dessus de la couche active; et une couche isolante organique formée sur le dessus de la couche de grille. L'invention réduit la contrainte d'une couche diélectrique intercouche et réduit l'épaisseur globale de la couche diélectrique intercouche, ce qui permet d'augmenter le degré auquel un écran d'affichage flexible peut fléchir.
(ZH) 本发明公开了一种柔性薄膜晶体管及其制备方法。该柔性薄膜晶体管包括:基板;有源层,形成在基板上方;栅极,形成在有源层上方;以及有机绝缘层,形成在栅极上方。本发明减小了层间介电层的应力,降低了层间介电层的整体厚度,进而提升柔性显示屏的可弯折程度。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)