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1. (WO2019041855) PIXEL DRIVING CIRCUIT, PIXEL STRUCTURE AND MANUFACTURING METHOD
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Pub. No.: WO/2019/041855 International Application No.: PCT/CN2018/084880
Publication Date: 07.03.2019 International Filing Date: 27.04.2018
IPC:
G09G 3/20 (2006.01) ,G02F 1/133 (2006.01)
G PHYSICS
09
EDUCATING; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
G
ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
3
Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
20
for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix
G PHYSICS
02
OPTICS
F
DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1
Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01
for the control of the intensity, phase, polarisation or colour
13
based on liquid crystals, e.g. single liquid crystal display cells
133
Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
Applicants:
昆山国显光电有限公司 KUNSHAN GO-VISIONOX OPTO-ELECTRONICS CO., LTD. [CN/CN]; 中国江苏省昆山市 开发区龙腾路1号4幢 Building 4, No.1 Longteng Road, Development Zone Kunshan, Jiangsu 215300, CN
Inventors:
宋艳芹 SONG, Yanqin; CN
张九占 ZHANG, Jiuzhan; CN
Agent:
北京布瑞知识产权代理有限公司 BEIJING BRIGHT IP AGENCY CO., LTD.; 中国北京市 朝阳区广顺北大街5号院内32号B228 B228 No. 32, Inside the No. 5 Yard, Guangshun North Street, Chaoyang District Beijing 100102, CN
Priority Data:
201710760472.029.08.2017CN
Title (EN) PIXEL DRIVING CIRCUIT, PIXEL STRUCTURE AND MANUFACTURING METHOD
(FR) CIRCUIT DE COMMANDE DE PIXEL, STRUCTURE DE PIXEL ET PROCÉDÉ DE FABRICATION
(ZH) 像素驱动电路、像素结构和制作方法
Abstract:
(EN) Provided is a pixel driving circuit applicable to high pixel density, which is used for solving the technical problem of excessive low pixel density because the pixel of the existing panel is affected by the pixel driving circuit. The pixel drive circuit comprises a switch tube, wherein the switch tube uses a dual-gate electrode field-effect transistor, the dual-gate electrode field-effect transistor comprises a first gate electrode and a second gate electrode, and the first gate electrode and the second gate electrode are connected to the same scanning line. By taking a dual-gate electrode field-effect transistor as a switch tube, the improvement of PPI of a pixel affected by the pixel complexity caused by using an additional compensation circuit to overcome an interference factor is avoided. A pixel structure applicable to high pixel density and a manufacturing structure are further comprised.
(FR) L'invention concerne un circuit de commande de pixel applicable à une densité de pixel élevée, qui permet de résoudre le problème technique lié à l'excès de faible densité de pixel en raison de l'affectation du pixel du panneau existant par le circuit de commande de pixel. Le circuit de commande de pixel comprend un tube de commutation, le tube de commutation utilisant un transistor à effet de champ d'électrode à double grille, le transistor à effet de champ d'électrode à double grille comprenant une première électrode de grille et une seconde électrode de grille, et la première électrode de grille et la seconde électrode de grille étant connectées à la même ligne de balayage. En prenant un transistor à effet de champ d'électrode à double grille comme tube de commutation, l'amélioration de PPP d'un pixel qui est affecté par la complexité de pixel provoquée par l'utilisation d'un circuit de compensation supplémentaire pour surmonter un facteur d'interférence est évitée. L'invention concerne également une structure de pixel applicable à une densité de pixel élevée ainsi qu'une structure de fabrication.
(ZH) 一种适用于高像素密度的像素驱动电路,用于解决现有面板的像素受像素驱动电路影响,像素密度过低的技术问题。包括开关管,开关管采用双栅极场效应管,双栅极场效应管包括第一栅极和第二栅极,第一栅极和第二栅极连接同一扫描线。通过双栅极场效应管作为开关管,避免了采用额外补偿电路克服干扰因素造成像素复杂化影响像素PPI的提升。还包括适用于高像素密度的像素结构和制作方法。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)