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1. (WO2019041840) MEMORY UNIT AND STATIC RANDOM ACCESS MEMORY
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Pub. No.: WO/2019/041840 International Application No.: PCT/CN2018/084100
Publication Date: 07.03.2019 International Filing Date: 23.04.2018
IPC:
G11C 11/418 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
34
using semiconductor devices
40
using transistors
41
forming cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
413
Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
417
for memory cells of the field-effect type
418
Address circuits
Applicants:
华为技术有限公司 HUAWEI TECHNOLOGIES CO., LTD. [CN/CN]; 中国广东省深圳市 龙岗区坂田华为总部办公楼 Huawei Administration Building Bantian, Longgang District Shenzhen, Guangdong 518129, CN
Inventors:
池思杰 CHI, Sijie; CN
季秉武 JI, Bingwu; CN
赵坦夫 ZHAO, Tanfu; CN
周云明 ZHOU, Yunming; CN
Agent:
北京亿腾知识产权代理事务所 E-TONE INTELLECTUAL PROPERTY FIRM; 中国北京市 海淀区中关村紫金数码园3号楼707 Room 707, No. 3 Mansion, ZiJinShuMaYuan (Golden Valley) Zhongguancun, Haidian District Beijing 100190, CN
Priority Data:
201710785410.504.09.2017CN
Title (EN) MEMORY UNIT AND STATIC RANDOM ACCESS MEMORY
(FR) UNITÉ DE MÉMOIRE ET MÉMOIRE VIVE STATIQUE
(ZH) 一种存储单元和静态随机存储器
Abstract:
(EN) A memory unit and a static random access memory. The memory unit comprises : a latch, the latch providing a first memory bit; and the memory unit further comprises a first MOS tube; the gate electrode of the first MOS tube is connected to the first memory bit, the source electrode of the first MOS tube is connected to a first reading line, and the drain electrode of first MOS tube is connected to a second reading line; in a first state, the first reading line is a reading word line, and the second reading line is a reading bit line; and in a second state, the second reading line is a reading word line, and the first reading line is a reading bit line. The present memory unit and the memory unit of the static random access memory can enable the exchange of the reading word line and the reading bit line.
(FR) L'invention concerne une unité de mémoire et une mémoire vive statique. L'unité de mémoire comprend : un verrou, le verrou fournissant un premier bit de mémoire; et l'unité de mémoire comprenant en outre un premier tube MOS; l'électrode de grille du premier tube MOS est connectée au premier bit de mémoire, l'électrode de source du premier tube MOS est connectée à une première ligne de lecture, et l'électrode de drain du premier tube MOS est connectée à une seconde ligne de lecture; dans un premier état, la première ligne de lecture est une ligne de mots de lecture, et la seconde ligne de lecture est une ligne de bits de lecture; et dans un second état, la seconde ligne de lecture est une ligne de mots de lecture, et la première ligne de lecture est une ligne de bits de lecture. La présente unité de mémoire et l'unité de mémoire de la mémoire vive statique peuvent permettre l'échange de la ligne de mots de lecture et de la ligne de bits de lecture.
(ZH) 一种存储单元和静态随机存储器,该存储单元包括:锁存器,所述锁存器提供第一存储位;所述存储单元还包括第一MOS管;所述第一MOS管的栅极连接所述第一存储位,所述第一MOS管的源极连接第一读取线,所述第一MOS管的漏极连接第二读取线;在第一状态下,所述第一读取线为读取字线,所述第二读取线为读取位线;在第二状态下,所述第二读取线为读取字线,所述第一读取线为读取位线。本存储单元和静态随机存储器的存储单元能够实现读取字线和读取位线互换。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)